NVMFS6B05NLWFT1G

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Mfr.Part #
NVMFS6B05NLWFT1G
Manufacturer
onsemi
Package / Case
8-PowerTDFN
Datasheet
Download
Description
MOSFET N-CH 100V 17A 5DFN
Stock
19,711
In Stock :
19,711

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Series :
Automotive, AEC-Q101
Case Connection :
DRAIN
Number of Terminations :
5
JESD-609 Code :
e3
Operating Temperature :
-55°C~175°C TJ
Number of Pins :
8
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds :
3980pF @ 25V
Factory Lead Time :
38 Weeks
Mounting Type :
Surface Mount
Drain to Source Voltage (Vdss) :
100V
Rds On (Max) @ Id, Vgs :
5.6m Ω @ 20A, 10V
Drive Voltage (Max Rds On,Min Rds On) :
4.5V 10V
Drain Current-Max (Abs) (ID) :
114A
Transistor Element Material :
SILICON
Pbfree Code :
yes
Gate Charge (Qg) (Max) @ Vgs :
6.8nC @ 10V
Pulsed Drain Current-Max (IDM) :
330A
Configuration :
SINGLE WITH BUILT-IN DIODE
Terminal Finish :
Tin (Sn)
Lifecycle Status :
ACTIVE (Last Updated: 1 week ago)
Vgs (Max) :
±16V
Packaging :
Tape and Reel (TR)
JESD-30 Code :
R-PDSO-F5
Mount :
Surface Mount
Vgs(th) (Max) @ Id :
3V @ 250µA
Package / Case :
8-PowerTDFN
RoHS Status :
Non-RoHS Compliant
Number of Elements :
1
FET Type :
N-Channel
Power Dissipation-Max :
3.8W Ta 165W Tc
Reach Compliance Code :
not_compliant
Terminal Form :
Flat
Lead Free :
Lead Free
Avalanche Energy Rating (Eas) :
125 mJ
Terminal Position :
Dual
Published :
2015
Operating Mode :
ENHANCEMENT MODE
DS Breakdown Voltage-Min :
100V
Datasheets
NVMFS6B05NLWFT1G
Introducing Transistors - FETs, MOSFETs - Single onsemi NVMFS6B05NLWFT1G from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:5, Operating Temperature:-55°C~175°C TJ, Number of Pins:8, Mounting Type:Surface Mount, Package / Case:8-PowerTDFN, NVMFS6B05NLWFT1G pinout, NVMFS6B05NLWFT1G datasheet PDF, NVMFS6B05NLWFT1G amp .Beyond Transistors - FETs, MOSFETs - Single onsemi NVMFS6B05NLWFT1G ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi NVMFS6B05NLWFT1G


N-Channel Tape & Reel (TR) 5.6m Ω @ 20A, 10V ±16V 3980pF @ 25V 6.8nC @ 10V 100V 8-PowerTDFN

NVMFS6B05NLWFT1G Overview


There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 125 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 3980pF @ 25V maximal input capacitance.A device can conduct a maximum continuous current of [114A] according to its drain current.As far as peak drain current is concerned, its maximum pulsed current is 330A.The DS breakdown voltage should be maintained above 100V to maintain normal operation.To operate this transistor, you will need a 100V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (4.5V 10V).

NVMFS6B05NLWFT1G Features


the avalanche energy rating (Eas) is 125 mJ
based on its rated peak drain current 330A.
a 100V drain to source voltage (Vdss)


NVMFS6B05NLWFT1G Applications


There are a lot of ON Semiconductor
NVMFS6B05NLWFT1G applications of single MOSFETs transistors.


  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
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