NVMFS6B05NLT1G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Reach Compliance Code :

not_compliant

Lead Free :

Lead Free

Mount :

Surface Mount

Vgs (Max) :

±16V

Drain Current-Max (Abs) (ID) :

114A

Power Dissipation-Max :

3.8W Ta 165W Tc

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

JESD-30 Code :

R-PDSO-F5

Series :

Automotive, AEC-Q101

Published :

2015

FET Type :

N-Channel

Configuration :

SINGLE WITH BUILT-IN DIODE

Terminal Position :

Dual

Package / Case :

8-PowerTDFN, 5 Leads

Case Connection :

DRAIN

Drain to Source Voltage (Vdss) :

100V

Factory Lead Time :

38 Weeks

Input Capacitance (Ciss) (Max) @ Vds :

3980pF @ 25V

Terminal Form :

Flat

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

6.8nC @ 10V

RoHS Status :

Non-RoHS Compliant

Pulsed Drain Current-Max (IDM) :

330A

Lifecycle Status :

ACTIVE (Last Updated: 1 week ago)

Operating Mode :

ENHANCEMENT MODE

Vgs(th) (Max) @ Id :

3V @ 250µA

Number of Elements :

1

Number of Terminations :

5

JESD-609 Code :

e3

Terminal Finish :

Tin (Sn)

Pbfree Code :

yes

Rds On (Max) @ Id, Vgs :

5.6m Ω @ 20A, 10V

Packaging :

Tape and Reel (TR)

Transistor Element Material :

SILICON

Operating Temperature :

-55°C~175°C TJ

Avalanche Energy Rating (Eas) :

125 mJ

Drain-source On Resistance-Max :

0.0082Ohm

DS Breakdown Voltage-Min :

100V