NVMFS6B05NLT1G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Temperature :

-55°C~175°C TJ

Rds On (Max) @ Id, Vgs :

5.6m Ω @ 20A, 10V

Lead Free :

Lead Free

Factory Lead Time :

38 Weeks

Terminal Form :

Flat

Mount :

Surface Mount

Terminal Position :

Dual

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Voltage (Vdss) :

100V

RoHS Status :

Non-RoHS Compliant

Input Capacitance (Ciss) (Max) @ Vds :

3980pF @ 25V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Configuration :

SINGLE WITH BUILT-IN DIODE

Published :

2015

Pulsed Drain Current-Max (IDM) :

330A

Reach Compliance Code :

not_compliant

Drain Current-Max (Abs) (ID) :

114A

Power Dissipation-Max :

3.8W Ta 165W Tc

Transistor Element Material :

SILICON

Avalanche Energy Rating (Eas) :

125 mJ

JESD-609 Code :

e3

FET Type :

N-Channel

Series :

Automotive, AEC-Q101

Package / Case :

8-PowerTDFN, 5 Leads

Mounting Type :

Surface Mount

Packaging :

Tape and Reel (TR)

Vgs (Max) :

±16V

Operating Mode :

ENHANCEMENT MODE

DS Breakdown Voltage-Min :

100V

Drain-source On Resistance-Max :

0.0082Ohm

Vgs(th) (Max) @ Id :

3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs :

6.8nC @ 10V

Lifecycle Status :

ACTIVE (Last Updated: 1 week ago)

Number of Elements :

1

JESD-30 Code :

R-PDSO-F5

Case Connection :

DRAIN

Pbfree Code :

yes

Number of Terminations :

5

Terminal Finish :

Tin (Sn)