NVMFS5C673NLWFT3G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

DS Breakdown Voltage-Min :

60V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On (Max) @ Id, Vgs :

9.2m Ω @ 25A, 10V

Pulsed Drain Current-Max (IDM) :

290A

Configuration :

SINGLE WITH BUILT-IN DIODE

Published :

2015

JESD-30 Code :

R-PDSO-F5

Factory Lead Time :

38 Weeks

Drain to Source Voltage (Vdss) :

60V

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

9.5nC @ 10V

Terminal Finish :

Tin (Sn)

Power Dissipation-Max :

3.6W Ta 46W Tc

Vgs (Max) :

±20V

Reference Standard :

AEC-Q101

Number of Terminations :

5

RoHS Status :

ROHS3 Compliant

Terminal Position :

Dual

Operating Temperature :

-55°C~175°C TJ

JESD-609 Code :

e3

Package / Case :

8-PowerTDFN

Mount :

Surface Mount

Lead Free :

Lead Free

Reach Compliance Code :

not_compliant

Case Connection :

DRAIN

Input Capacitance (Ciss) (Max) @ Vds :

880pF @ 25V

Operating Mode :

ENHANCEMENT MODE

Transistor Element Material :

SILICON

Mounting Type :

Surface Mount

Pbfree Code :

yes

Lifecycle Status :

ACTIVE, NOT REC (Last Updated: 1 week ago)

Terminal Form :

Flat

Vgs(th) (Max) @ Id :

2V @ 35μA

Number of Elements :

1

Packaging :

Tape and Reel (TR)

Number of Pins :

8

Drain-source On Resistance-Max :

0.013Ohm