NVMFS5C673NLWFAFT1G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Mounting Type :

Surface Mount

Current - Continuous Drain (Id) @ 25°C :

50A Tc

Number of Terminations :

5

Avalanche Energy Rating (Eas) :

88 mJ

Operating Mode :

ENHANCEMENT MODE

Reach Compliance Code :

not_compliant

Height :

1.1mm

Power Dissipation-Max :

46W Tc

Turn-Off Delay Time :

16 ns

Number of Channels :

1

Terminal Form :

Flat

Vgs (Max) :

±20V

Transistor Element Material :

SILICON

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Power Dissipation :

3.6W

Configuration :

SINGLE WITH BUILT-IN DIODE

Terminal Position :

Dual

Series :

Automotive, AEC-Q101

Surface Mount :

yes

Drain to Source Breakdown Voltage :

60V

Pbfree Code :

yes

Pulsed Drain Current-Max (IDM) :

290A

JESD-609 Code :

e3

Max Junction Temperature (Tj) :

175°C

Number of Elements :

1

RoHS Status :

ROHS3 Compliant

Input Capacitance (Ciss) (Max) @ Vds :

880pF @ 25V

Operating Temperature :

-55°C~175°C TJ

Lifecycle Status :

ACTIVE (Last Updated: 20 hours ago)

Rds On (Max) @ Id, Vgs :

9.2m Ω @ 25A, 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Continuous Drain Current (ID) :

14A

Gate Charge (Qg) (Max) @ Vgs :

9.5nC @ 10V

Vgs(th) (Max) @ Id :

2V @ 35μA

JESD-30 Code :

R-PDSO-F5

Factory Lead Time :

10 Weeks

Turn On Delay Time :

6 ns

Gate to Source Voltage (Vgs) :

20V

Package / Case :

8-PowerTDFN, 5 Leads

Terminal Finish :

Tin (Sn)

Packaging :

Tape and Reel (TR)

FET Type :

N-Channel

Case Connection :

DRAIN