NVMFS5C670NLWFT3G
- Mfr.Part #
- NVMFS5C670NLWFT3G
- Manufacturer
- onsemi
- Package / Case
- 8-PowerTDFN
- Datasheet
- Download
- Description
- MOSFET N-CH 60V 17A/71A 5DFN
- Stock
- 42,394
- In Stock :
- 42,394
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Lead Free :
- Lead Free
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Avalanche Energy Rating (Eas) :
- 166 mJ
- Mount :
- Surface Mount
- Pulsed Drain Current-Max (IDM) :
- 440A
- JESD-609 Code :
- e3
- Gate Charge (Qg) (Max) @ Vgs :
- 20nC @ 10V
- Operating Mode :
- ENHANCEMENT MODE
- Power Dissipation-Max :
- 3.6W Ta 61W Tc
- Reference Standard :
- AEC-Q101
- Vgs (Max) :
- ±20V
- Package / Case :
- 8-PowerTDFN
- Vgs(th) (Max) @ Id :
- 2V @ 250μA
- Number of Elements :
- 1
- Drain to Source Voltage (Vdss) :
- 60V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Rds On (Max) @ Id, Vgs :
- 6.1m Ω @ 35A, 10V
- FET Type :
- N-Channel
- Current - Continuous Drain (Id) @ 25°C :
- 17A Ta 71A Tc
- JESD-30 Code :
- R-PDSO-F5
- Input Capacitance (Ciss) (Max) @ Vds :
- 1400pF @ 25V
- Operating Temperature :
- -55°C~175°C TJ
- Lifecycle Status :
- ACTIVE, NOT REC (Last Updated: 1 week ago)
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Terminal Finish :
- Tin (Sn)
- Factory Lead Time :
- 38 Weeks
- RoHS Status :
- ROHS3 Compliant
- Packaging :
- Tape and Reel (TR)
- Reach Compliance Code :
- not_compliant
- Mounting Type :
- Surface Mount
- Terminal Form :
- Flat
- Number of Pins :
- 8
- Terminal Position :
- Dual
- Case Connection :
- DRAIN
- Continuous Drain Current (ID) :
- 71A
- Number of Terminations :
- 5
- DS Breakdown Voltage-Min :
- 60V
- Published :
- 2015
- Transistor Element Material :
- SILICON
- Pbfree Code :
- yes
- Datasheets
- NVMFS5C670NLWFT3G

N-Channel Tape & Reel (TR) 6.1m Ω @ 35A, 10V ±20V 1400pF @ 25V 20nC @ 10V 60V 8-PowerTDFN
NVMFS5C670NLWFT3G Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 166 mJ.A device's maximum input capacitance is 1400pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 71A for this device. Drain current refers to the capacity of the device to conduct continuous current.Its maximum pulsed drain current is 440A, which is also its maximum rating peak drainage current.For normal operation, maintain the DS breakdown voltage above 60V.To operate this transistor, you need to apply a 60V drain to source voltage (Vdss).This device uses no drive voltage (4.5V 10V) to reduce its overall power consumption.
NVMFS5C670NLWFT3G Features
the avalanche energy rating (Eas) is 166 mJ
a continuous drain current (ID) of 71A
based on its rated peak drain current 440A.
a 60V drain to source voltage (Vdss)
NVMFS5C670NLWFT3G Applications
There are a lot of ON Semiconductor
NVMFS5C670NLWFT3G applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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