NVMFS5C670NLWFT3G

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Mfr.Part #
NVMFS5C670NLWFT3G
Manufacturer
onsemi
Package / Case
8-PowerTDFN
Datasheet
Download
Description
MOSFET N-CH 60V 17A/71A 5DFN
Stock
42,394
In Stock :
42,394

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Lead Free :
Lead Free
Drive Voltage (Max Rds On,Min Rds On) :
4.5V 10V
Avalanche Energy Rating (Eas) :
166 mJ
Mount :
Surface Mount
Pulsed Drain Current-Max (IDM) :
440A
JESD-609 Code :
e3
Gate Charge (Qg) (Max) @ Vgs :
20nC @ 10V
Operating Mode :
ENHANCEMENT MODE
Power Dissipation-Max :
3.6W Ta 61W Tc
Reference Standard :
AEC-Q101
Vgs (Max) :
±20V
Package / Case :
8-PowerTDFN
Vgs(th) (Max) @ Id :
2V @ 250μA
Number of Elements :
1
Drain to Source Voltage (Vdss) :
60V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Rds On (Max) @ Id, Vgs :
6.1m Ω @ 35A, 10V
FET Type :
N-Channel
Current - Continuous Drain (Id) @ 25°C :
17A Ta 71A Tc
JESD-30 Code :
R-PDSO-F5
Input Capacitance (Ciss) (Max) @ Vds :
1400pF @ 25V
Operating Temperature :
-55°C~175°C TJ
Lifecycle Status :
ACTIVE, NOT REC (Last Updated: 1 week ago)
Configuration :
SINGLE WITH BUILT-IN DIODE
Terminal Finish :
Tin (Sn)
Factory Lead Time :
38 Weeks
RoHS Status :
ROHS3 Compliant
Packaging :
Tape and Reel (TR)
Reach Compliance Code :
not_compliant
Mounting Type :
Surface Mount
Terminal Form :
Flat
Number of Pins :
8
Terminal Position :
Dual
Case Connection :
DRAIN
Continuous Drain Current (ID) :
71A
Number of Terminations :
5
DS Breakdown Voltage-Min :
60V
Published :
2015
Transistor Element Material :
SILICON
Pbfree Code :
yes
Datasheets
NVMFS5C670NLWFT3G
Introducing Transistors - FETs, MOSFETs - Single onsemi NVMFS5C670NLWFT3G from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:8-PowerTDFN, Operating Temperature:-55°C~175°C TJ, Mounting Type:Surface Mount, Number of Pins:8, Number of Terminations:5, NVMFS5C670NLWFT3G pinout, NVMFS5C670NLWFT3G datasheet PDF, NVMFS5C670NLWFT3G amp .Beyond Transistors - FETs, MOSFETs - Single onsemi NVMFS5C670NLWFT3G ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi NVMFS5C670NLWFT3G


N-Channel Tape & Reel (TR) 6.1m Ω @ 35A, 10V ±20V 1400pF @ 25V 20nC @ 10V 60V 8-PowerTDFN

NVMFS5C670NLWFT3G Overview


As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 166 mJ.A device's maximum input capacitance is 1400pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 71A for this device. Drain current refers to the capacity of the device to conduct continuous current.Its maximum pulsed drain current is 440A, which is also its maximum rating peak drainage current.For normal operation, maintain the DS breakdown voltage above 60V.To operate this transistor, you need to apply a 60V drain to source voltage (Vdss).This device uses no drive voltage (4.5V 10V) to reduce its overall power consumption.

NVMFS5C670NLWFT3G Features


the avalanche energy rating (Eas) is 166 mJ
a continuous drain current (ID) of 71A
based on its rated peak drain current 440A.
a 60V drain to source voltage (Vdss)


NVMFS5C670NLWFT3G Applications


There are a lot of ON Semiconductor
NVMFS5C670NLWFT3G applications of single MOSFETs transistors.


  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
  • DC-to-DC converters
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