NVMFS5C670NLWFAFT1G
- Mfr.Part #
- NVMFS5C670NLWFAFT1G
- Manufacturer
- onsemi
- Package / Case
- 8-PowerTDFN, 5 Leads
- Datasheet
- Download
- Description
- MOSFET N-CH 60V 17A/71A 5DFN
- Stock
- 31,580
- In Stock :
- 31,580
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- JESD-609 Code :
- e3
- Factory Lead Time :
- 6 Weeks
- Vgs (Max) :
- ±20V
- Avalanche Energy Rating (Eas) :
- 166 mJ
- Series :
- Automotive, AEC-Q101
- Operating Temperature :
- -55°C~175°C TJ
- RoHS Status :
- ROHS3 Compliant
- Mounting Type :
- Surface Mount
- Transistor Element Material :
- SILICON
- Number of Elements :
- 1
- Number of Terminations :
- 5
- DS Breakdown Voltage-Min :
- 60V
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Terminal Form :
- Flat
- Reach Compliance Code :
- not_compliant
- Drain-source On Resistance-Max :
- 0.0088Ohm
- Input Capacitance (Ciss) (Max) @ Vds :
- 1400pF @ 25V
- Packaging :
- Tape and Reel (TR)
- FET Type :
- N-Channel
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Current - Continuous Drain (Id) @ 25°C :
- 17A Ta 71A Tc
- JESD-30 Code :
- R-PDSO-F5
- Lifecycle Status :
- ACTIVE (Last Updated: 19 hours ago)
- Rds On (Max) @ Id, Vgs :
- 6.1m Ω @ 35A, 10V
- Power Dissipation-Max :
- 61W Tc
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Drain to Source Voltage (Vdss) :
- 60V
- Vgs(th) (Max) @ Id :
- 2V @ 53μA
- Operating Mode :
- ENHANCEMENT MODE
- Pulsed Drain Current-Max (IDM) :
- 440A
- Terminal Finish :
- Tin (Sn)
- Gate Charge (Qg) (Max) @ Vgs :
- 20nC @ 10V
- Package / Case :
- 8-PowerTDFN, 5 Leads
- Terminal Position :
- Dual
- Pbfree Code :
- yes
- Surface Mount :
- yes
- Case Connection :
- DRAIN
- Datasheets
- NVMFS5C670NLWFAFT1G

N-Channel Tape & Reel (TR) 6.1m Ω @ 35A, 10V ±20V 1400pF @ 25V 20nC @ 10V 60V 8-PowerTDFN, 5 Leads
NVMFS5C670NLWFAFT1G Descrption
This NVMFS5C670NLWFAFT1G is an automotive power MOSFET in a 5x6mm flat lead package that is designed to be compact, efficient, and feature high thermal performance. It is possible to choose a wettable flank option for enhanced optical inspection. This MOSFET is qualified to comply with AEC-Q101 and is capable of complying with PPAP.
NVMFS5C670NLWFAFT1G Features
-
Small Footprint (5x6 mm) for Compact Design
-
Low RDS(on) to Minimize Conduction Losses
-
Low QG and Capacitance to Minimize Driver Losses
-
NVMFS5C670NLWF ? Wettable Flank Option for Enhanced Optical Inspection
-
AEC?Q101 Qualified and PPAP Capable
-
These Devices are Pb?Free and are RoHS Compliant
NVMFS5C670NLWFAFT1G Applications
-
Switching power supplies
-
Reverse Battery protection
-
Power switches (High Side Driver, Low Side Driver, H-Bridges, etc.
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