NVMFS5C670NLT3G
- Mfr.Part #
- NVMFS5C670NLT3G
- Manufacturer
- onsemi
- Package / Case
- 8-PowerTDFN
- Datasheet
- Download
- Description
- MOSFET N-CH 60V 17A/71A 5DFN
- Stock
- 18,318
- In Stock :
- 18,318
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- JESD-30 Code :
- R-PDSO-F5
- Pulsed Drain Current-Max (IDM) :
- 440A
- Current - Continuous Drain (Id) @ 25°C :
- 17A Ta 71A Tc
- Packaging :
- Tape and Reel (TR)
- Pbfree Code :
- yes
- Vgs (Max) :
- ±20V
- Terminal Finish :
- Tin (Sn)
- Factory Lead Time :
- 39 Weeks
- Operating Mode :
- ENHANCEMENT MODE
- Operating Temperature :
- -55°C~175°C TJ
- JESD-609 Code :
- e3
- Mount :
- Surface Mount
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Reach Compliance Code :
- not_compliant
- Published :
- 2015
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- RoHS Status :
- ROHS3 Compliant
- Continuous Drain Current (ID) :
- 71A
- Terminal Form :
- Flat
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Terminations :
- 5
- Lifecycle Status :
- ACTIVE, NOT REC (Last Updated: 1 week ago)
- Reference Standard :
- AEC-Q101
- REACH SVHC :
- No SVHC
- Vgs(th) (Max) @ Id :
- 2V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds :
- 1400pF @ 25V
- Terminal Position :
- Dual
- Threshold Voltage :
- 2V
- Number of Elements :
- 1
- Transistor Element Material :
- SILICON
- Number of Pins :
- 8
- Package / Case :
- 8-PowerTDFN
- Drain to Source Voltage (Vdss) :
- 60V
- Gate Charge (Qg) (Max) @ Vgs :
- 20nC @ 10V
- Power Dissipation-Max :
- 3.6W Ta 61W Tc
- DS Breakdown Voltage-Min :
- 60V
- FET Type :
- N-Channel
- Mounting Type :
- Surface Mount
- Case Connection :
- DRAIN
- Rds On (Max) @ Id, Vgs :
- 6.1m Ω @ 35A, 10V
- Lead Free :
- Lead Free
- Avalanche Energy Rating (Eas) :
- 166 mJ
- Datasheets
- NVMFS5C670NLT3G

N-Channel Tape & Reel (TR) 6.1m Ω @ 35A, 10V ±20V 1400pF @ 25V 20nC @ 10V 60V 8-PowerTDFN
NVMFS5C670NLT3G Overview
In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 166 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 1400pF @ 25V.This device conducts a continuous drain current (ID) of 71A, which is the maximum continuous current transistor can conduct.Pulsed drain current is maximum rated peak drain current 440A.Activation of any electrical operation happens at threshold voltage, and this transistor has 2V threshold voltage.A normal operation of the DS requires keeping the breakdown voltage above 60V.This transistor requires a drain-source voltage (Vdss) of 60V.In order to reduce power consumption, this device uses a drive voltage of 4.5V 10V volts (4.5V 10V).
NVMFS5C670NLT3G Features
the avalanche energy rating (Eas) is 166 mJ
a continuous drain current (ID) of 71A
based on its rated peak drain current 440A.
a threshold voltage of 2V
a 60V drain to source voltage (Vdss)
NVMFS5C670NLT3G Applications
There are a lot of ON Semiconductor
NVMFS5C670NLT3G applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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