NVMFS5C670NLT3G

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Mfr.Part #
NVMFS5C670NLT3G
Manufacturer
onsemi
Package / Case
8-PowerTDFN
Datasheet
Download
Description
MOSFET N-CH 60V 17A/71A 5DFN
Stock
18,318
In Stock :
18,318

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
JESD-30 Code :
R-PDSO-F5
Pulsed Drain Current-Max (IDM) :
440A
Current - Continuous Drain (Id) @ 25°C :
17A Ta 71A Tc
Packaging :
Tape and Reel (TR)
Pbfree Code :
yes
Vgs (Max) :
±20V
Terminal Finish :
Tin (Sn)
Factory Lead Time :
39 Weeks
Operating Mode :
ENHANCEMENT MODE
Operating Temperature :
-55°C~175°C TJ
JESD-609 Code :
e3
Mount :
Surface Mount
Configuration :
SINGLE WITH BUILT-IN DIODE
Reach Compliance Code :
not_compliant
Published :
2015
Drive Voltage (Max Rds On,Min Rds On) :
4.5V 10V
RoHS Status :
ROHS3 Compliant
Continuous Drain Current (ID) :
71A
Terminal Form :
Flat
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Number of Terminations :
5
Lifecycle Status :
ACTIVE, NOT REC (Last Updated: 1 week ago)
Reference Standard :
AEC-Q101
REACH SVHC :
No SVHC
Vgs(th) (Max) @ Id :
2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds :
1400pF @ 25V
Terminal Position :
Dual
Threshold Voltage :
2V
Number of Elements :
1
Transistor Element Material :
SILICON
Number of Pins :
8
Package / Case :
8-PowerTDFN
Drain to Source Voltage (Vdss) :
60V
Gate Charge (Qg) (Max) @ Vgs :
20nC @ 10V
Power Dissipation-Max :
3.6W Ta 61W Tc
DS Breakdown Voltage-Min :
60V
FET Type :
N-Channel
Mounting Type :
Surface Mount
Case Connection :
DRAIN
Rds On (Max) @ Id, Vgs :
6.1m Ω @ 35A, 10V
Lead Free :
Lead Free
Avalanche Energy Rating (Eas) :
166 mJ
Datasheets
NVMFS5C670NLT3G
Introducing Transistors - FETs, MOSFETs - Single onsemi NVMFS5C670NLT3G from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~175°C TJ, Number of Terminations:5, Number of Pins:8, Package / Case:8-PowerTDFN, Mounting Type:Surface Mount, NVMFS5C670NLT3G pinout, NVMFS5C670NLT3G datasheet PDF, NVMFS5C670NLT3G amp .Beyond Transistors - FETs, MOSFETs - Single onsemi NVMFS5C670NLT3G ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi NVMFS5C670NLT3G


N-Channel Tape & Reel (TR) 6.1m Ω @ 35A, 10V ±20V 1400pF @ 25V 20nC @ 10V 60V 8-PowerTDFN

NVMFS5C670NLT3G Overview


In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 166 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 1400pF @ 25V.This device conducts a continuous drain current (ID) of 71A, which is the maximum continuous current transistor can conduct.Pulsed drain current is maximum rated peak drain current 440A.Activation of any electrical operation happens at threshold voltage, and this transistor has 2V threshold voltage.A normal operation of the DS requires keeping the breakdown voltage above 60V.This transistor requires a drain-source voltage (Vdss) of 60V.In order to reduce power consumption, this device uses a drive voltage of 4.5V 10V volts (4.5V 10V).

NVMFS5C670NLT3G Features


the avalanche energy rating (Eas) is 166 mJ
a continuous drain current (ID) of 71A
based on its rated peak drain current 440A.
a threshold voltage of 2V
a 60V drain to source voltage (Vdss)


NVMFS5C670NLT3G Applications


There are a lot of ON Semiconductor
NVMFS5C670NLT3G applications of single MOSFETs transistors.


  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
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