NVMFS5C628NLWFT3G

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Mfr.Part #
NVMFS5C628NLWFT3G
Manufacturer
onsemi
Package / Case
8-PowerTDFN
Datasheet
Download
Description
MOSFET N-CH 60V 5DFN
Stock
5,366
In Stock :
5,366

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Gate Charge (Qg) (Max) @ Vgs :
52nC @ 10V
Drain to Source Voltage (Vdss) :
60V
Input Capacitance (Ciss) (Max) @ Vds :
3600pF @ 25V
Power Dissipation-Max :
3.7W Ta 110W Tc
FET Type :
N-Channel
Factory Lead Time :
38 Weeks
Number of Pins :
8
Operating Temperature :
-55°C~175°C TJ
Vgs (Max) :
±20V
Rds On (Max) @ Id, Vgs :
2.4m Ω @ 50A, 10V
Lead Free :
Lead Free
Transistor Element Material :
SILICON
Mounting Type :
Surface Mount
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Vgs(th) (Max) @ Id :
2V @ 135μA
JESD-609 Code :
e3
JESD-30 Code :
R-PDSO-F5
Mount :
Surface Mount
Packaging :
Tape and Reel (TR)
Terminal Finish :
Tin (Sn)
Drive Voltage (Max Rds On,Min Rds On) :
4.5V 10V
Operating Mode :
ENHANCEMENT MODE
Pulsed Drain Current-Max (IDM) :
900A
RoHS Status :
ROHS3 Compliant
Drain-source On Resistance-Max :
0.0033Ohm
Number of Elements :
1
Number of Terminations :
5
Configuration :
SINGLE WITH BUILT-IN DIODE
Pbfree Code :
yes
Case Connection :
DRAIN
Package / Case :
8-PowerTDFN
Terminal Form :
Flat
Avalanche Energy Rating (Eas) :
565 mJ
Terminal Position :
Dual
Reach Compliance Code :
not_compliant
Published :
2015
DS Breakdown Voltage-Min :
60V
Reference Standard :
AEC-Q101
Datasheets
NVMFS5C628NLWFT3G
Introducing Transistors - FETs, MOSFETs - Single onsemi NVMFS5C628NLWFT3G from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:8, Operating Temperature:-55°C~175°C TJ, Mounting Type:Surface Mount, Number of Terminations:5, Package / Case:8-PowerTDFN, NVMFS5C628NLWFT3G pinout, NVMFS5C628NLWFT3G datasheet PDF, NVMFS5C628NLWFT3G amp .Beyond Transistors - FETs, MOSFETs - Single onsemi NVMFS5C628NLWFT3G ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi NVMFS5C628NLWFT3G


N-Channel Tape & Reel (TR) 2.4m Ω @ 50A, 10V ±20V 3600pF @ 25V 52nC @ 10V 60V 8-PowerTDFN

NVMFS5C628NLWFT3G Overview


Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 565 mJ.A device's maximal input capacitance is 3600pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.In terms of pulsed drain current, it has a maximum of 900A, which is its maximum rated peak drain current.To maintain normal operation, it is recommended that the DS breakdown voltage be above 60V.This transistor requires a 60V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (4.5V 10V).

NVMFS5C628NLWFT3G Features


the avalanche energy rating (Eas) is 565 mJ
based on its rated peak drain current 900A.
a 60V drain to source voltage (Vdss)


NVMFS5C628NLWFT3G Applications


There are a lot of ON Semiconductor
NVMFS5C628NLWFT3G applications of single MOSFETs transistors.


  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
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