NVMFS5C628NLWFT3G
- Mfr.Part #
- NVMFS5C628NLWFT3G
- Manufacturer
- onsemi
- Package / Case
- 8-PowerTDFN
- Datasheet
- Download
- Description
- MOSFET N-CH 60V 5DFN
- Stock
- 5,366
- In Stock :
- 5,366
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Gate Charge (Qg) (Max) @ Vgs :
- 52nC @ 10V
- Drain to Source Voltage (Vdss) :
- 60V
- Input Capacitance (Ciss) (Max) @ Vds :
- 3600pF @ 25V
- Power Dissipation-Max :
- 3.7W Ta 110W Tc
- FET Type :
- N-Channel
- Factory Lead Time :
- 38 Weeks
- Number of Pins :
- 8
- Operating Temperature :
- -55°C~175°C TJ
- Vgs (Max) :
- ±20V
- Rds On (Max) @ Id, Vgs :
- 2.4m Ω @ 50A, 10V
- Lead Free :
- Lead Free
- Transistor Element Material :
- SILICON
- Mounting Type :
- Surface Mount
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vgs(th) (Max) @ Id :
- 2V @ 135μA
- JESD-609 Code :
- e3
- JESD-30 Code :
- R-PDSO-F5
- Mount :
- Surface Mount
- Packaging :
- Tape and Reel (TR)
- Terminal Finish :
- Tin (Sn)
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Operating Mode :
- ENHANCEMENT MODE
- Pulsed Drain Current-Max (IDM) :
- 900A
- RoHS Status :
- ROHS3 Compliant
- Drain-source On Resistance-Max :
- 0.0033Ohm
- Number of Elements :
- 1
- Number of Terminations :
- 5
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Pbfree Code :
- yes
- Case Connection :
- DRAIN
- Package / Case :
- 8-PowerTDFN
- Terminal Form :
- Flat
- Avalanche Energy Rating (Eas) :
- 565 mJ
- Terminal Position :
- Dual
- Reach Compliance Code :
- not_compliant
- Published :
- 2015
- DS Breakdown Voltage-Min :
- 60V
- Reference Standard :
- AEC-Q101
- Datasheets
- NVMFS5C628NLWFT3G

N-Channel Tape & Reel (TR) 2.4m Ω @ 50A, 10V ±20V 3600pF @ 25V 52nC @ 10V 60V 8-PowerTDFN
NVMFS5C628NLWFT3G Overview
Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 565 mJ.A device's maximal input capacitance is 3600pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.In terms of pulsed drain current, it has a maximum of 900A, which is its maximum rated peak drain current.To maintain normal operation, it is recommended that the DS breakdown voltage be above 60V.This transistor requires a 60V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (4.5V 10V).
NVMFS5C628NLWFT3G Features
the avalanche energy rating (Eas) is 565 mJ
based on its rated peak drain current 900A.
a 60V drain to source voltage (Vdss)
NVMFS5C628NLWFT3G Applications
There are a lot of ON Semiconductor
NVMFS5C628NLWFT3G applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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