NVMFS5C604NLAFT1G

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Mfr.Part #
NVMFS5C604NLAFT1G
Manufacturer
onsemi
Package / Case
8-PowerTDFN, 5 Leads
Datasheet
Download
Description
MOSFET N-CH 60V 287A 5DFN
Stock
46,273
In Stock :
46,273

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
JESD-609 Code :
e3
Current - Continuous Drain (Id) @ 25°C :
287A Tc
Input Capacitance (Ciss) (Max) @ Vds :
8900pF @ 25V
FET Type :
N-Channel
Package / Case :
8-PowerTDFN, 5 Leads
Terminal Finish :
Tin (Sn)
Height :
1.1mm
Packaging :
Tape and Reel (TR)
Max Junction Temperature (Tj) :
175°C
Continuous Drain Current (ID) :
40A
Turn-Off Delay Time :
57.8 ns
Mounting Type :
Surface Mount
Reach Compliance Code :
not_compliant
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
RoHS Status :
ROHS3 Compliant
Power Dissipation-Max :
200W Tc
Vgs(th) (Max) @ Id :
2V @ 250μA
Power Dissipation :
3.9W
Factory Lead Time :
12 Weeks
Drive Voltage (Max Rds On,Min Rds On) :
4.5V 10V
Gate Charge (Qg) (Max) @ Vgs :
52nC @ 4.5V
Vgs (Max) :
±20V
Lifecycle Status :
ACTIVE (Last Updated: 14 hours ago)
Series :
Automotive, AEC-Q101
Number of Channels :
1
Pbfree Code :
yes
Gate to Source Voltage (Vgs) :
20V
Rds On (Max) @ Id, Vgs :
1.2m Ω @ 50A, 10V
Drain to Source Breakdown Voltage :
60V
Turn On Delay Time :
21.8 ns
Operating Temperature :
-55°C~175°C TJ
Datasheets
NVMFS5C604NLAFT1G
Introducing Transistors - FETs, MOSFETs - Single onsemi NVMFS5C604NLAFT1G from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:8-PowerTDFN, 5 Leads, Mounting Type:Surface Mount, Number of Channels:1, Operating Temperature:-55°C~175°C TJ, NVMFS5C604NLAFT1G pinout, NVMFS5C604NLAFT1G datasheet PDF, NVMFS5C604NLAFT1G amp .Beyond Transistors - FETs, MOSFETs - Single onsemi NVMFS5C604NLAFT1G ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi NVMFS5C604NLAFT1G


N-Channel Tape & Reel (TR) 1.2m Ω @ 50A, 10V ±20V 8900pF @ 25V 52nC @ 4.5V 8-PowerTDFN, 5 Leads

NVMFS5C604NLAFT1G Overview


An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 8900pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 40A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 60V, and this device has a drainage-to-source breakdown voltage of 60VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 57.8 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 21.8 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.Using drive voltage (4.5V 10V), this device contributes to a reduction in overall power consumption.

NVMFS5C604NLAFT1G Features


a continuous drain current (ID) of 40A
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 57.8 ns


NVMFS5C604NLAFT1G Applications


There are a lot of ON Semiconductor
NVMFS5C604NLAFT1G applications of single MOSFETs transistors.


  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
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