NVMFS5C442NLT1G
- Mfr.Part #
- NVMFS5C442NLT1G
- Manufacturer
- onsemi
- Package / Case
- 8-PowerTDFN
- Datasheet
- Download
- Description
- MOSFET N-CH 40V 27A/127A 5DFN
- Stock
- 4,433
- In Stock :
- 4,433
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Fall Time (Typ) :
- 8.4 ns
- Pbfree Code :
- yes
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- FET Type :
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 50nC @ 10V
- Operating Temperature :
- -55°C~175°C TJ
- Number of Pins :
- 8
- Packaging :
- Tape and Reel (TR)
- Mounting Type :
- Surface Mount
- Rise Time :
- 72ns
- Factory Lead Time :
- 38 Weeks
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Turn-Off Delay Time :
- 28 ns
- Current - Continuous Drain (Id) @ 25°C :
- 27A Ta 127A Tc
- Rds On (Max) @ Id, Vgs :
- 2.8m Ω @ 50A, 10V
- Power Dissipation :
- 3.7W
- Gate to Source Voltage (Vgs) :
- 20V
- Vgs(th) (Max) @ Id :
- 2V @ 250μA
- Reach Compliance Code :
- not_compliant
- Continuous Drain Current (ID) :
- 127A
- Published :
- 2014
- Terminal Finish :
- Tin (Sn)
- Lifecycle Status :
- ACTIVE, NOT REC (Last Updated: 3 days ago)
- RoHS Status :
- ROHS3 Compliant
- Input Capacitance (Ciss) (Max) @ Vds :
- 3100pF @ 25V
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Lead Free :
- Lead Free
- Vgs (Max) :
- ±20V
- Package / Case :
- 8-PowerTDFN
- Power Dissipation-Max :
- 3.7W Ta 83W Tc
- Drain to Source Breakdown Voltage :
- 40V
- Mount :
- Surface Mount
- Configuration :
- Single
- ECCN Code :
- EAR99
- JESD-609 Code :
- e3
- Number of Channels :
- 1
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Turn On Delay Time :
- 12 ns
- Datasheets
- NVMFS5C442NLT1G

N-Channel Tape & Reel (TR) 2.8m Ω @ 50A, 10V ±20V 3100pF @ 25V 50nC @ 10V 8-PowerTDFN
NVMFS5C442NLT1G Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 3100pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 40V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 40V.As a result of its turn-off delay time, which is 28 ns, the device has taken time to charge its input capacitance before drain current conduction begins.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 12 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.In addition to reducing power consumption, this device uses drive voltage (4.5V 10V).
NVMFS5C442NLT1G Features
a continuous drain current (ID) of 127A
a drain-to-source breakdown voltage of 40V voltage
the turn-off delay time is 28 ns
NVMFS5C442NLT1G Applications
There are a lot of ON Semiconductor
NVMFS5C442NLT1G applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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