NVMFS5C430NLWFT3G
- Mfr.Part #
- NVMFS5C430NLWFT3G
- Manufacturer
- onsemi
- Package / Case
- 8-PowerTDFN
- Datasheet
- Download
- Description
- MOSFET N-CH 40V 200A 5DFN
- Stock
- 31,411
- In Stock :
- 31,411
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Published :
- 2015
- DS Breakdown Voltage-Min :
- 40V
- Package / Case :
- 8-PowerTDFN
- JESD-609 Code :
- e3
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Drain-source On Resistance-Max :
- 0.0022Ohm
- Transistor Element Material :
- SILICON
- Drain to Source Voltage (Vdss) :
- 40V
- Input Capacitance (Ciss) (Max) @ Vds :
- 4300pF @ 20V
- Power Dissipation-Max :
- 3.8W Ta 110W Tc
- RoHS Status :
- ROHS3 Compliant
- Case Connection :
- DRAIN
- Vgs (Max) :
- ±20V
- FET Type :
- N-Channel
- Number of Elements :
- 1
- Pbfree Code :
- yes
- Number of Terminations :
- 5
- Terminal Position :
- Dual
- Lead Free :
- Lead Free
- Mount :
- Surface Mount
- Rds On (Max) @ Id, Vgs :
- 1.5m Ω @ 50A, 10V
- Mounting Type :
- Surface Mount
- Pulsed Drain Current-Max (IDM) :
- 900A
- Number of Pins :
- 8
- Packaging :
- Tape and Reel (TR)
- Reach Compliance Code :
- not_compliant
- Factory Lead Time :
- 38 Weeks
- Terminal Finish :
- Tin (Sn)
- Reference Standard :
- AEC-Q101
- Operating Mode :
- ENHANCEMENT MODE
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Vgs(th) (Max) @ Id :
- 2V @ 250μA
- Gate Charge (Qg) (Max) @ Vgs :
- 70nC @ 10V
- Lifecycle Status :
- ACTIVE, NOT REC (Last Updated: 3 days ago)
- JESD-30 Code :
- R-PDSO-F5
- Avalanche Energy Rating (Eas) :
- 493 mJ
- Terminal Form :
- Flat
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Temperature :
- -55°C~175°C TJ
- Datasheets
- NVMFS5C430NLWFT3G

N-Channel Tape & Reel (TR) 1.5m Ω @ 50A, 10V ±20V 4300pF @ 20V 70nC @ 10V 40V 8-PowerTDFN
NVMFS5C430NLWFT3G Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 493 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 4300pF @ 20V.There is a peak drain current of 900A, its maximum pulsed drain current.In order for DS breakdown voltage to remain above 40V, it should remain above the 40V level.The transistor must receive a 40V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (4.5V 10V).
NVMFS5C430NLWFT3G Features
the avalanche energy rating (Eas) is 493 mJ
based on its rated peak drain current 900A.
a 40V drain to source voltage (Vdss)
NVMFS5C430NLWFT3G Applications
There are a lot of ON Semiconductor
NVMFS5C430NLWFT3G applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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