NVMFS5C430NLWFT3G

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Mfr.Part #
NVMFS5C430NLWFT3G
Manufacturer
onsemi
Package / Case
8-PowerTDFN
Datasheet
Download
Description
MOSFET N-CH 40V 200A 5DFN
Stock
31,411
In Stock :
31,411

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Published :
2015
DS Breakdown Voltage-Min :
40V
Package / Case :
8-PowerTDFN
JESD-609 Code :
e3
Configuration :
SINGLE WITH BUILT-IN DIODE
Drain-source On Resistance-Max :
0.0022Ohm
Transistor Element Material :
SILICON
Drain to Source Voltage (Vdss) :
40V
Input Capacitance (Ciss) (Max) @ Vds :
4300pF @ 20V
Power Dissipation-Max :
3.8W Ta 110W Tc
RoHS Status :
ROHS3 Compliant
Case Connection :
DRAIN
Vgs (Max) :
±20V
FET Type :
N-Channel
Number of Elements :
1
Pbfree Code :
yes
Number of Terminations :
5
Terminal Position :
Dual
Lead Free :
Lead Free
Mount :
Surface Mount
Rds On (Max) @ Id, Vgs :
1.5m Ω @ 50A, 10V
Mounting Type :
Surface Mount
Pulsed Drain Current-Max (IDM) :
900A
Number of Pins :
8
Packaging :
Tape and Reel (TR)
Reach Compliance Code :
not_compliant
Factory Lead Time :
38 Weeks
Terminal Finish :
Tin (Sn)
Reference Standard :
AEC-Q101
Operating Mode :
ENHANCEMENT MODE
Drive Voltage (Max Rds On,Min Rds On) :
4.5V 10V
Vgs(th) (Max) @ Id :
2V @ 250μA
Gate Charge (Qg) (Max) @ Vgs :
70nC @ 10V
Lifecycle Status :
ACTIVE, NOT REC (Last Updated: 3 days ago)
JESD-30 Code :
R-PDSO-F5
Avalanche Energy Rating (Eas) :
493 mJ
Terminal Form :
Flat
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Operating Temperature :
-55°C~175°C TJ
Datasheets
NVMFS5C430NLWFT3G
Introducing Transistors - FETs, MOSFETs - Single onsemi NVMFS5C430NLWFT3G from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:8-PowerTDFN, Number of Terminations:5, Mounting Type:Surface Mount, Number of Pins:8, Operating Temperature:-55°C~175°C TJ, NVMFS5C430NLWFT3G pinout, NVMFS5C430NLWFT3G datasheet PDF, NVMFS5C430NLWFT3G amp .Beyond Transistors - FETs, MOSFETs - Single onsemi NVMFS5C430NLWFT3G ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi NVMFS5C430NLWFT3G


N-Channel Tape & Reel (TR) 1.5m Ω @ 50A, 10V ±20V 4300pF @ 20V 70nC @ 10V 40V 8-PowerTDFN

NVMFS5C430NLWFT3G Overview


As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 493 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 4300pF @ 20V.There is a peak drain current of 900A, its maximum pulsed drain current.In order for DS breakdown voltage to remain above 40V, it should remain above the 40V level.The transistor must receive a 40V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (4.5V 10V).

NVMFS5C430NLWFT3G Features


the avalanche energy rating (Eas) is 493 mJ
based on its rated peak drain current 900A.
a 40V drain to source voltage (Vdss)


NVMFS5C430NLWFT3G Applications


There are a lot of ON Semiconductor
NVMFS5C430NLWFT3G applications of single MOSFETs transistors.


  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
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