NVMFS5C430NLWFT1G

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Mfr.Part #
NVMFS5C430NLWFT1G
Manufacturer
onsemi
Package / Case
8-PowerTDFN
Datasheet
Download
Description
MOSFET N-CH 40V 200A 5DFN
Stock
12,159
In Stock :
12,159

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Number of Pins :
8
Drive Voltage (Max Rds On,Min Rds On) :
4.5V 10V
Reference Standard :
AEC-Q101
Case Connection :
DRAIN
Lead Free :
Lead Free
FET Type :
N-Channel
Packaging :
Tape and Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds :
4300pF @ 20V
Number of Elements :
1
Vgs (Max) :
±20V
Mounting Type :
Surface Mount
RoHS Status :
ROHS3 Compliant
Transistor Element Material :
SILICON
Drain-source On Resistance-Max :
0.0022Ohm
Factory Lead Time :
38 Weeks
Rds On (Max) @ Id, Vgs :
1.5m Ω @ 50A, 10V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Configuration :
SINGLE WITH BUILT-IN DIODE
Terminal Finish :
Tin (Sn)
Package / Case :
8-PowerTDFN
Number of Terminations :
5
Avalanche Energy Rating (Eas) :
493 mJ
DS Breakdown Voltage-Min :
40V
Mount :
Surface Mount
Gate Charge (Qg) (Max) @ Vgs :
70nC @ 10V
Power Dissipation-Max :
3.8W Ta 110W Tc
Operating Mode :
ENHANCEMENT MODE
Pulsed Drain Current-Max (IDM) :
900A
Lifecycle Status :
ACTIVE, NOT REC (Last Updated: 3 days ago)
JESD-30 Code :
R-PDSO-F5
Terminal Position :
Dual
Terminal Form :
Flat
Pbfree Code :
yes
JESD-609 Code :
e3
Published :
2016
Operating Temperature :
-55°C~175°C TJ
Reach Compliance Code :
not_compliant
Vgs(th) (Max) @ Id :
2V @ 250μA
Drain to Source Voltage (Vdss) :
40V
Datasheets
NVMFS5C430NLWFT1G
Introducing Transistors - FETs, MOSFETs - Single onsemi NVMFS5C430NLWFT1G from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:8, Mounting Type:Surface Mount, Package / Case:8-PowerTDFN, Number of Terminations:5, Operating Temperature:-55°C~175°C TJ, NVMFS5C430NLWFT1G pinout, NVMFS5C430NLWFT1G datasheet PDF, NVMFS5C430NLWFT1G amp .Beyond Transistors - FETs, MOSFETs - Single onsemi NVMFS5C430NLWFT1G ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi NVMFS5C430NLWFT1G


N-Channel Tape & Reel (TR) 1.5m Ω @ 50A, 10V ±20V 4300pF @ 20V 70nC @ 10V 40V 8-PowerTDFN

NVMFS5C430NLWFT1G Overview


There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 493 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 4300pF @ 20V.A maximum pulsed drain current of 900A is the maximum peak drain current rated for this device.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 40V.In order to operate this transistor, a voltage of 40V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (4.5V 10V).

NVMFS5C430NLWFT1G Features


the avalanche energy rating (Eas) is 493 mJ
based on its rated peak drain current 900A.
a 40V drain to source voltage (Vdss)


NVMFS5C430NLWFT1G Applications


There are a lot of ON Semiconductor
NVMFS5C430NLWFT1G applications of single MOSFETs transistors.


  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
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