NVMFS5C430NLWFT1G
- Mfr.Part #
- NVMFS5C430NLWFT1G
- Manufacturer
- onsemi
- Package / Case
- 8-PowerTDFN
- Datasheet
- Download
- Description
- MOSFET N-CH 40V 200A 5DFN
- Stock
- 12,159
- In Stock :
- 12,159
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Number of Pins :
- 8
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Reference Standard :
- AEC-Q101
- Case Connection :
- DRAIN
- Lead Free :
- Lead Free
- FET Type :
- N-Channel
- Packaging :
- Tape and Reel (TR)
- Input Capacitance (Ciss) (Max) @ Vds :
- 4300pF @ 20V
- Number of Elements :
- 1
- Vgs (Max) :
- ±20V
- Mounting Type :
- Surface Mount
- RoHS Status :
- ROHS3 Compliant
- Transistor Element Material :
- SILICON
- Drain-source On Resistance-Max :
- 0.0022Ohm
- Factory Lead Time :
- 38 Weeks
- Rds On (Max) @ Id, Vgs :
- 1.5m Ω @ 50A, 10V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Terminal Finish :
- Tin (Sn)
- Package / Case :
- 8-PowerTDFN
- Number of Terminations :
- 5
- Avalanche Energy Rating (Eas) :
- 493 mJ
- DS Breakdown Voltage-Min :
- 40V
- Mount :
- Surface Mount
- Gate Charge (Qg) (Max) @ Vgs :
- 70nC @ 10V
- Power Dissipation-Max :
- 3.8W Ta 110W Tc
- Operating Mode :
- ENHANCEMENT MODE
- Pulsed Drain Current-Max (IDM) :
- 900A
- Lifecycle Status :
- ACTIVE, NOT REC (Last Updated: 3 days ago)
- JESD-30 Code :
- R-PDSO-F5
- Terminal Position :
- Dual
- Terminal Form :
- Flat
- Pbfree Code :
- yes
- JESD-609 Code :
- e3
- Published :
- 2016
- Operating Temperature :
- -55°C~175°C TJ
- Reach Compliance Code :
- not_compliant
- Vgs(th) (Max) @ Id :
- 2V @ 250μA
- Drain to Source Voltage (Vdss) :
- 40V
- Datasheets
- NVMFS5C430NLWFT1G

N-Channel Tape & Reel (TR) 1.5m Ω @ 50A, 10V ±20V 4300pF @ 20V 70nC @ 10V 40V 8-PowerTDFN
NVMFS5C430NLWFT1G Overview
There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 493 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 4300pF @ 20V.A maximum pulsed drain current of 900A is the maximum peak drain current rated for this device.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 40V.In order to operate this transistor, a voltage of 40V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (4.5V 10V).
NVMFS5C430NLWFT1G Features
the avalanche energy rating (Eas) is 493 mJ
based on its rated peak drain current 900A.
a 40V drain to source voltage (Vdss)
NVMFS5C430NLWFT1G Applications
There are a lot of ON Semiconductor
NVMFS5C430NLWFT1G applications of single MOSFETs transistors.
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
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