NVMFS5C430NLWFAFT1G

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Mfr.Part #
NVMFS5C430NLWFAFT1G
Manufacturer
onsemi
Package / Case
8-PowerTDFN, 5 Leads
Datasheet
Download
Description
MOSFET N-CH 40V 38A/200A 5DFN
Stock
35,650
In Stock :
35,650

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Vgs(th) (Max) @ Id :
2V @ 250μA
Lifecycle Status :
ACTIVE (Last Updated: 1 week ago)
Terminal Finish :
Tin (Sn)
Factory Lead Time :
14 Weeks
Power Dissipation-Max :
3.8W Ta 110W Tc
Configuration :
SINGLE WITH BUILT-IN DIODE
Pbfree Code :
yes
Series :
Automotive, AEC-Q101
RoHS Status :
ROHS3 Compliant
JESD-30 Code :
R-PDSO-F5
Current - Continuous Drain (Id) @ 25°C :
38A Ta 200A Tc
JESD-609 Code :
e3
Number of Terminations :
5
Rds On (Max) @ Id, Vgs :
1.4m Ω @ 50A, 10V
DS Breakdown Voltage-Min :
40V
Package / Case :
8-PowerTDFN, 5 Leads
Operating Mode :
ENHANCEMENT MODE
Transistor Element Material :
SILICON
FET Type :
N-Channel
Terminal Form :
Flat
Drive Voltage (Max Rds On,Min Rds On) :
4.5V 10V
Reach Compliance Code :
not_compliant
Gate Charge (Qg) (Max) @ Vgs :
70nC @ 10V
Packaging :
Tape and Reel (TR)
Avalanche Energy Rating (Eas) :
493 mJ
Surface Mount :
yes
Operating Temperature :
-55°C~175°C TJ
Drain to Source Voltage (Vdss) :
40V
Number of Elements :
1
Case Connection :
DRAIN
Terminal Position :
Dual
Drain-source On Resistance-Max :
0.0022Ohm
Input Capacitance (Ciss) (Max) @ Vds :
4300pF @ 20V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Mounting Type :
Surface Mount
Vgs (Max) :
±20V
Pulsed Drain Current-Max (IDM) :
900A
Introducing Transistors - FETs, MOSFETs - Single onsemi NVMFS5C430NLWFAFT1G from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:5, Package / Case:8-PowerTDFN, 5 Leads, Operating Temperature:-55°C~175°C TJ, Mounting Type:Surface Mount, NVMFS5C430NLWFAFT1G pinout, NVMFS5C430NLWFAFT1G datasheet PDF, NVMFS5C430NLWFAFT1G amp .Beyond Transistors - FETs, MOSFETs - Single onsemi NVMFS5C430NLWFAFT1G ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi NVMFS5C430NLWFAFT1G


N-Channel Tape & Reel (TR) 1.4m Ω @ 50A, 10V ±20V 4300pF @ 20V 70nC @ 10V 40V 8-PowerTDFN, 5 Leads

NVMFS5C430NLWFAFT1G Overview


Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 493 mJ.A device's maximal input capacitance is 4300pF @ 20V, which is defined as the capacitance between its input terminals with either input grounded.In terms of pulsed drain current, it has a maximum of 900A, which is its maximum rated peak drain current.To maintain normal operation, it is recommended that the DS breakdown voltage be above 40V.This transistor requires a 40V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (4.5V 10V).

NVMFS5C430NLWFAFT1G Features


the avalanche energy rating (Eas) is 493 mJ
based on its rated peak drain current 900A.
a 40V drain to source voltage (Vdss)


NVMFS5C430NLWFAFT1G Applications


There are a lot of ON Semiconductor
NVMFS5C430NLWFAFT1G applications of single MOSFETs transistors.


  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
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