NVMFS5C430NLT3G
- Mfr.Part #
- NVMFS5C430NLT3G
- Manufacturer
- onsemi
- Package / Case
- 8-PowerTDFN
- Datasheet
- Download
- Description
- MOSFET N-CH 40V 200A 5DFN
- Stock
- 48,110
- In Stock :
- 48,110
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Reach Compliance Code :
- not_compliant
- Power Dissipation-Max :
- 3.8W Ta 110W Tc
- JESD-609 Code :
- e3
- RoHS Status :
- ROHS3 Compliant
- Drain-source On Resistance-Max :
- 0.0022Ohm
- Package / Case :
- 8-PowerTDFN
- Mounting Type :
- Surface Mount
- Rds On (Max) @ Id, Vgs :
- 1.5m Ω @ 50A, 10V
- Lead Free :
- Lead Free
- Packaging :
- Tape and Reel (TR)
- Drain to Source Voltage (Vdss) :
- 40V
- Lifecycle Status :
- ACTIVE, NOT REC (Last Updated: 3 days ago)
- Number of Pins :
- 8
- Vgs (Max) :
- ±20V
- Number of Elements :
- 1
- Number of Terminations :
- 5
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- FET Type :
- N-Channel
- Mount :
- Surface Mount
- Pbfree Code :
- yes
- Transistor Element Material :
- SILICON
- Pulsed Drain Current-Max (IDM) :
- 900A
- Gate Charge (Qg) (Max) @ Vgs :
- 70nC @ 10V
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Vgs(th) (Max) @ Id :
- 2V @ 250μA
- Terminal Form :
- Flat
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Position :
- Dual
- Case Connection :
- DRAIN
- Avalanche Energy Rating (Eas) :
- 493 mJ
- Reference Standard :
- AEC-Q101
- JESD-30 Code :
- R-PDSO-F5
- Input Capacitance (Ciss) (Max) @ Vds :
- 4300pF @ 20V
- DS Breakdown Voltage-Min :
- 40V
- Operating Temperature :
- -55°C~175°C TJ
- Terminal Finish :
- Tin (Sn)
- Factory Lead Time :
- 38 Weeks
- Operating Mode :
- ENHANCEMENT MODE
- Published :
- 2015
- Datasheets
- NVMFS5C430NLT3G

N-Channel Tape & Reel (TR) 1.5m Ω @ 50A, 10V ±20V 4300pF @ 20V 70nC @ 10V 40V 8-PowerTDFN
NVMFS5C430NLT3G Overview
In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 493 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 4300pF @ 20V.Pulsed drain current is maximum rated peak drain current 900A.A normal operation of the DS requires keeping the breakdown voltage above 40V.This transistor requires a drain-source voltage (Vdss) of 40V.In order to reduce power consumption, this device uses a drive voltage of 4.5V 10V volts (4.5V 10V).
NVMFS5C430NLT3G Features
the avalanche energy rating (Eas) is 493 mJ
based on its rated peak drain current 900A.
a 40V drain to source voltage (Vdss)
NVMFS5C430NLT3G Applications
There are a lot of ON Semiconductor
NVMFS5C430NLT3G applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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