NVMFS5C430NLT1G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs(th) (Max) @ Id :

2V @ 250μA

Number of Elements :

1

FET Type :

N-Channel

Mounting Type :

Surface Mount

Reference Standard :

AEC-Q101

Drain to Source Voltage (Vdss) :

40V

Transistor Element Material :

SILICON

Terminal Form :

Flat

Reach Compliance Code :

not_compliant

Lead Free :

Lead Free

Operating Temperature :

-55°C~175°C TJ

Case Connection :

DRAIN

Power Dissipation-Max :

3.8W Ta 110W Tc

JESD-609 Code :

e3

RoHS Status :

ROHS3 Compliant

Number of Terminations :

5

Factory Lead Time :

38 Weeks

Operating Mode :

ENHANCEMENT MODE

Gate Charge (Qg) (Max) @ Vgs :

70nC @ 10V

Configuration :

SINGLE WITH BUILT-IN DIODE

Mount :

Surface Mount

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Input Capacitance (Ciss) (Max) @ Vds :

4300pF @ 20V

DS Breakdown Voltage-Min :

40V

Avalanche Energy Rating (Eas) :

493 mJ

Pulsed Drain Current-Max (IDM) :

900A

Published :

2015

Drain-source On Resistance-Max :

0.0022Ohm

Vgs (Max) :

±20V

Pbfree Code :

yes

Terminal Position :

Dual

JESD-30 Code :

R-PDSO-F5

Lifecycle Status :

ACTIVE, NOT REC (Last Updated: 3 days ago)

Number of Pins :

8

Package / Case :

8-PowerTDFN

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On (Max) @ Id, Vgs :

1.5m Ω @ 50A, 10V

Packaging :

Tape and Reel (TR)

Terminal Finish :

Tin (Sn)