NVMFS5C410NLT3G

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Mfr.Part #
NVMFS5C410NLT3G
Manufacturer
onsemi
Package / Case
8-PowerTDFN
Datasheet
Download
Description
MOSFET N-CH 40V 48A/315A 5DFN
Stock
26,054
In Stock :
26,054

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Mount :
Surface Mount
Terminal Position :
Dual
Terminal Finish :
Tin (Sn)
Reference Standard :
AEC-Q101
JESD-609 Code :
e3
Configuration :
SINGLE WITH BUILT-IN DIODE
Transistor Element Material :
SILICON
Published :
2014
Input Capacitance (Ciss) (Max) @ Vds :
8862pF @ 25V
Time@Peak Reflow Temperature-Max (s) :
30
Pbfree Code :
yes
Lifecycle Status :
ACTIVE, NOT REC (Last Updated: 1 week ago)
Number of Elements :
1
Packaging :
Tape and Reel (TR)
Rds On (Max) @ Id, Vgs :
0.9m Ω @ 50A, 10V
Drive Voltage (Max Rds On,Min Rds On) :
4.5V 10V
RoHS Status :
ROHS3 Compliant
Terminal Form :
Flat
Lead Free :
Lead Free
Drain-source On Resistance-Max :
0.0013Ohm
Avalanche Energy Rating (Eas) :
706 mJ
Gate Charge (Qg) (Max) @ Vgs :
143nC @ 10V
Number of Terminations :
5
DS Breakdown Voltage-Min :
40V
JESD-30 Code :
R-PDSO-F5
Reach Compliance Code :
not_compliant
Number of Pins :
8
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Factory Lead Time :
38 Weeks
Peak Reflow Temperature (Cel) :
260
FET Type :
N-Channel
Vgs(th) (Max) @ Id :
2V @ 250μA
Drain to Source Voltage (Vdss) :
40V
Package / Case :
8-PowerTDFN
Pulsed Drain Current-Max (IDM) :
900A
Current - Continuous Drain (Id) @ 25°C :
48A Ta 315A Tc
Continuous Drain Current (ID) :
315A
Vgs (Max) :
±20V
Case Connection :
DRAIN
ECCN Code :
EAR99
Operating Temperature :
-55°C~175°C TJ
Power Dissipation-Max :
3.8W Ta 167W Tc
Operating Mode :
ENHANCEMENT MODE
Mounting Type :
Surface Mount
Datasheets
NVMFS5C410NLT3G
Introducing Transistors - FETs, MOSFETs - Single onsemi NVMFS5C410NLT3G from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:5, Number of Pins:8, Package / Case:8-PowerTDFN, Operating Temperature:-55°C~175°C TJ, Mounting Type:Surface Mount, NVMFS5C410NLT3G pinout, NVMFS5C410NLT3G datasheet PDF, NVMFS5C410NLT3G amp .Beyond Transistors - FETs, MOSFETs - Single onsemi NVMFS5C410NLT3G ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi NVMFS5C410NLT3G


N-Channel Tape & Reel (TR) 0.9m Ω @ 50A, 10V ±20V 8862pF @ 25V 143nC @ 10V 40V 8-PowerTDFN

NVMFS5C410NLT3G Overview


Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 706 mJ.A device's maximal input capacitance is 8862pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 315A, which represents the maximum continuous current it can conduct.In terms of pulsed drain current, it has a maximum of 900A, which is its maximum rated peak drain current.To maintain normal operation, it is recommended that the DS breakdown voltage be above 40V.This transistor requires a 40V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (4.5V 10V).

NVMFS5C410NLT3G Features


the avalanche energy rating (Eas) is 706 mJ
a continuous drain current (ID) of 315A
based on its rated peak drain current 900A.
a 40V drain to source voltage (Vdss)


NVMFS5C410NLT3G Applications


There are a lot of ON Semiconductor
NVMFS5C410NLT3G applications of single MOSFETs transistors.


  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
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