NVMFS5C410NLT3G
- Mfr.Part #
- NVMFS5C410NLT3G
- Manufacturer
- onsemi
- Package / Case
- 8-PowerTDFN
- Datasheet
- Download
- Description
- MOSFET N-CH 40V 48A/315A 5DFN
- Stock
- 26,054
- In Stock :
- 26,054
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Mount :
- Surface Mount
- Terminal Position :
- Dual
- Terminal Finish :
- Tin (Sn)
- Reference Standard :
- AEC-Q101
- JESD-609 Code :
- e3
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Transistor Element Material :
- SILICON
- Published :
- 2014
- Input Capacitance (Ciss) (Max) @ Vds :
- 8862pF @ 25V
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Pbfree Code :
- yes
- Lifecycle Status :
- ACTIVE, NOT REC (Last Updated: 1 week ago)
- Number of Elements :
- 1
- Packaging :
- Tape and Reel (TR)
- Rds On (Max) @ Id, Vgs :
- 0.9m Ω @ 50A, 10V
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- RoHS Status :
- ROHS3 Compliant
- Terminal Form :
- Flat
- Lead Free :
- Lead Free
- Drain-source On Resistance-Max :
- 0.0013Ohm
- Avalanche Energy Rating (Eas) :
- 706 mJ
- Gate Charge (Qg) (Max) @ Vgs :
- 143nC @ 10V
- Number of Terminations :
- 5
- DS Breakdown Voltage-Min :
- 40V
- JESD-30 Code :
- R-PDSO-F5
- Reach Compliance Code :
- not_compliant
- Number of Pins :
- 8
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Factory Lead Time :
- 38 Weeks
- Peak Reflow Temperature (Cel) :
- 260
- FET Type :
- N-Channel
- Vgs(th) (Max) @ Id :
- 2V @ 250μA
- Drain to Source Voltage (Vdss) :
- 40V
- Package / Case :
- 8-PowerTDFN
- Pulsed Drain Current-Max (IDM) :
- 900A
- Current - Continuous Drain (Id) @ 25°C :
- 48A Ta 315A Tc
- Continuous Drain Current (ID) :
- 315A
- Vgs (Max) :
- ±20V
- Case Connection :
- DRAIN
- ECCN Code :
- EAR99
- Operating Temperature :
- -55°C~175°C TJ
- Power Dissipation-Max :
- 3.8W Ta 167W Tc
- Operating Mode :
- ENHANCEMENT MODE
- Mounting Type :
- Surface Mount
- Datasheets
- NVMFS5C410NLT3G

N-Channel Tape & Reel (TR) 0.9m Ω @ 50A, 10V ±20V 8862pF @ 25V 143nC @ 10V 40V 8-PowerTDFN
NVMFS5C410NLT3G Overview
Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 706 mJ.A device's maximal input capacitance is 8862pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 315A, which represents the maximum continuous current it can conduct.In terms of pulsed drain current, it has a maximum of 900A, which is its maximum rated peak drain current.To maintain normal operation, it is recommended that the DS breakdown voltage be above 40V.This transistor requires a 40V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (4.5V 10V).
NVMFS5C410NLT3G Features
the avalanche energy rating (Eas) is 706 mJ
a continuous drain current (ID) of 315A
based on its rated peak drain current 900A.
a 40V drain to source voltage (Vdss)
NVMFS5C410NLT3G Applications
There are a lot of ON Semiconductor
NVMFS5C410NLT3G applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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