NVMFS5A160PLZT3G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs (Max) :

±20V

Current - Continuous Drain (Id) @ 25°C :

15A Ta 100A Tc

Input Capacitance (Ciss) (Max) @ Vds :

7700pF @ 20V

Operating Temperature :

-55°C~175°C TJ

Terminal Position :

Dual

Drain to Source Voltage (Vdss) :

60V

Terminal Finish :

Tin (Sn)

Avalanche Energy Rating (Eas) :

335 mJ

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Package / Case :

8-PowerTDFN, 5 Leads

Factory Lead Time :

38 Weeks

JESD-609 Code :

e3

Configuration :

SINGLE WITH BUILT-IN DIODE

Case Connection :

DRAIN

FET Type :

P-Channel

Vgs(th) (Max) @ Id :

2.6V @ 1mA

Terminal Form :

Flat

RoHS Status :

RoHS Compliant

Mounting Type :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminations :

5

Transistor Element Material :

SILICON

JESD-30 Code :

R-PDSO-F5

Number of Elements :

1

Peak Reflow Temperature (Cel) :

260

Pbfree Code :

yes

Pulsed Drain Current-Max (IDM) :

400A

Rds On (Max) @ Id, Vgs :

7.7m Ω @ 50A, 10V

Power Dissipation-Max :

3.8W Ta 200W Tc

Time@Peak Reflow Temperature-Max (s) :

30

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Published :

2015

Operating Mode :

ENHANCEMENT MODE

Packaging :

Tape and Reel (TR)

Series :

Automotive, AEC-Q101

Surface Mount :

yes

Drain-source On Resistance-Max :

0.0105Ohm

DS Breakdown Voltage-Min :

60V

Gate Charge (Qg) (Max) @ Vgs :

160nC @ 10V