NVMFS5A160PLZT1G
- Mfr.Part #
- NVMFS5A160PLZT1G
- Manufacturer
- onsemi
- Package / Case
- 8-PowerTDFN, 5 Leads
- Datasheet
- Download
- Description
- MOSFET P-CH 60V 15A/100A 5DFN
- Stock
- 2,779
- In Stock :
- 2,779
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Package / Case :
- 8-PowerTDFN, 5 Leads
- Pbfree Code :
- yes
- Operating Mode :
- ENHANCEMENT MODE
- Factory Lead Time :
- 18 Weeks
- Terminal Finish :
- Tin (Sn)
- Gate Charge (Qg) (Max) @ Vgs :
- 160nC @ 10V
- Number of Elements :
- 1
- Mounting Type :
- Surface Mount
- Current - Continuous Drain (Id) @ 25°C :
- 15A Ta 100A Tc
- Vgs (Max) :
- ±20V
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Transistor Element Material :
- SILICON
- RoHS Status :
- RoHS Compliant
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Drain-source On Resistance-Max :
- 0.0105Ohm
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Input Capacitance (Ciss) (Max) @ Vds :
- 7700pF @ 20V
- FET Type :
- P-Channel
- Peak Reflow Temperature (Cel) :
- 260
- Operating Temperature :
- -55°C~175°C TJ
- Number of Terminations :
- 5
- Packaging :
- Tape and Reel (TR)
- DS Breakdown Voltage-Min :
- 60V
- Drain to Source Voltage (Vdss) :
- 60V
- Surface Mount :
- yes
- Vgs(th) (Max) @ Id :
- 2.6V @ 1mA
- Rds On (Max) @ Id, Vgs :
- 7.7m Ω @ 50A, 10V
- Case Connection :
- DRAIN
- Power Dissipation-Max :
- 3.8W Ta 200W Tc
- JESD-30 Code :
- R-PDSO-F5
- Pulsed Drain Current-Max (IDM) :
- 400A
- Avalanche Energy Rating (Eas) :
- 335 mJ
- JESD-609 Code :
- e3
- Terminal Form :
- Flat
- Published :
- 2015
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Series :
- Automotive, AEC-Q101
- Terminal Position :
- Dual
- Datasheets
- NVMFS5A160PLZT1G

P-Channel Tape & Reel (TR) 7.7m Ω @ 50A, 10V ±20V 7700pF @ 20V 160nC @ 10V 60V 8-PowerTDFN, 5 Leads
NVMFS5A160PLZT1G Description
NVMFS5A160PLZT1G belongs to the family of P-channel power MOSFETs manufactured by ON Semiconductor. It is able to minimize conduction losses based on low RDS (on) and minimize driver losses based on low QG and capacitance. Due to its high quality and reliable performance, it is optimized for a wide range of applications, including switching applications, synchronous rectification, and uninterruptible power supplies.
NVMFS5A160PLZT1G Features
-
Low RDS(on)
-
Low conduction losses
-
Advanced switching performance
-
High dv/dt capability
-
Available in the DFN5 (SO-8FL) package
NVMFS5A160PLZT1G Applications
-
Switching applications
-
Synchronous rectification
-
Uninterruptible power supplies
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