NVMFS5885NLWFT1G
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- Mfr.Part #
- NVMFS5885NLWFT1G
- Manufacturer
- onsemi
- Package / Case
- 8-PowerTDFN
- Datasheet
- Download
- Description
- MOSFET N-CH 60V 10.2A 5DFN
- Stock
- 22,054
- In Stock ：
- 22,054
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Radiation Hardening :
- No
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Vgs (Max) :
- ±20V
- Packaging :
- Tape and Reel (TR)
- Gate Charge (Qg) (Max) @ Vgs :
- 21nC @ 10V
- Continuous Drain Current (ID) :
- 39A
- Turn-Off Delay Time :
- 18 ns
- Factory Lead Time :
- 38 Weeks
- JESD-609 Code :
- e3
- Terminal Finish :
- Tin (Sn)
- Rds On (Max) @ Id, Vgs :
- 15m Ω @ 15A, 10V
- Package / Case :
- 8-PowerTDFN
- Fall Time (Typ) :
- 52 ns
- RoHS Status :
- ROHS3 Compliant
- Mounting Type :
- Surface Mount
- Rise Time :
- 64ns
- FET Type :
- N-Channel
- Lead Free :
- Lead Free
- ECCN Code :
- EAR99
- Element Configuration :
- Single
- Vgs(th) (Max) @ Id :
- 2.5V @ 250μA
- Turn On Delay Time :
- 10 ns
- Lifecycle Status :
- ACTIVE, NOT REC (Last Updated: 4 days ago)
- Input Capacitance (Ciss) (Max) @ Vds :
- 1340pF @ 25V
- Pbfree Code :
- yes
- Halogen Free :
- Halogen Free
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Pins :
- 5
- Power Dissipation-Max :
- 3.7W Ta 54W Tc
- Current - Continuous Drain (Id) @ 25°C :
- 10.2A Ta
- Surface Mount :
- yes
- Number of Channels :
- 1
- Gate to Source Voltage (Vgs) :
- 20V
- Operating Temperature :
- -55°C~175°C TJ
- Drain to Source Breakdown Voltage :
- 60V
- Published :
- 2013
- Pin Count :
- 5
- Datasheets
- NVMFS5885NLWFT1G
N-Channel Tape & Reel (TR) 15m Ω @ 15A, 10V ±20V 1340pF @ 25V 21nC @ 10V 8-PowerTDFN
NVMFS5885NLWFT1G Overview
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 1340pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 39A amps.In this device, the drain-source breakdown voltage is 60V and VGS=60V, so the drain-source breakdown voltage is 60V in this case.It is [18 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.A turn-on delay time of 10 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.A device like this reduces its overall power consumption when it uses drive voltage (4.5V 10V).
NVMFS5885NLWFT1G Features
a continuous drain current (ID) of 39A
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 18 ns
NVMFS5885NLWFT1G Applications
There are a lot of ON Semiconductor
NVMFS5885NLWFT1G applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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