NVMFS5885NLT3G
- Mfr.Part #
- NVMFS5885NLT3G
- Manufacturer
- onsemi
- Package / Case
- 8-PowerTDFN
- Datasheet
- Download
- Description
- MOSFET N-CH 60V 10.2A 5DFN
- Stock
- 2,341
- In Stock :
- 2,341
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Lead Free :
- Lead Free
- Operating Temperature :
- -55°C~175°C TJ
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Halogen Free :
- Halogen Free
- Vgs(th) (Max) @ Id :
- 2.5V @ 250μA
- Package / Case :
- 8-PowerTDFN
- FET Type :
- N-Channel
- Reach Compliance Code :
- not_compliant
- Fall Time (Typ) :
- 52 ns
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Continuous Drain Current (ID) :
- 10.2A
- Rds On (Max) @ Id, Vgs :
- 15m Ω @ 15A, 10V
- Terminal Finish :
- Tin (Sn)
- Number of Channels :
- 1
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Gate to Source Voltage (Vgs) :
- 20V
- Rise Time :
- 64ns
- Pbfree Code :
- yes
- RoHS Status :
- ROHS3 Compliant
- Published :
- 2013
- Current - Continuous Drain (Id) @ 25°C :
- 10.2A Ta
- Vgs (Max) :
- ±20V
- Pin Count :
- 5
- ECCN Code :
- EAR99
- Input Capacitance (Ciss) (Max) @ Vds :
- 1340pF @ 25V
- Element Configuration :
- Single
- Mounting Type :
- Surface Mount
- Surface Mount :
- yes
- JESD-609 Code :
- e3
- Turn On Delay Time :
- 10 ns
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Drain to Source Voltage (Vdss) :
- 60V
- Lifecycle Status :
- ACTIVE, NOT REC (Last Updated: 3 days ago)
- Power Dissipation-Max :
- 3.7W Ta 54W Tc
- Turn-Off Delay Time :
- 18 ns
- Drain Current-Max (Abs) (ID) :
- 39A
- Packaging :
- Tape and Reel (TR)
- Gate Charge (Qg) (Max) @ Vgs :
- 21nC @ 10V
- Factory Lead Time :
- 38 Weeks
- Number of Pins :
- 5
- Datasheets
- NVMFS5885NLT3G

N-Channel Tape & Reel (TR) 15m Ω @ 15A, 10V ±20V 1340pF @ 25V 21nC @ 10V 60V 8-PowerTDFN
NVMFS5885NLT3G Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 1340pF @ 25V.This device conducts a continuous drain current (ID) of 10.2A, which is the maximum continuous current transistor can conduct.The drain current is the maximum continuous current this device can conduct, which is 39A.When the device is turned off, a turn-off delay time of 18 ns occurs as the input capacitance charges before drain current conduction commences.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 10 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.This transistor requires a drain-source voltage (Vdss) of 60V.In order to reduce power consumption, this device uses a drive voltage of 4.5V 10V volts (4.5V 10V).
NVMFS5885NLT3G Features
a continuous drain current (ID) of 10.2A
the turn-off delay time is 18 ns
a 60V drain to source voltage (Vdss)
NVMFS5885NLT3G Applications
There are a lot of ON Semiconductor
NVMFS5885NLT3G applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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