NVMFS5844NLT3G
- Mfr.Part #
- NVMFS5844NLT3G
- Manufacturer
- onsemi
- Package / Case
- 8-PowerTDFN, 5 Leads
- Datasheet
- Download
- Description
- MOSFET N-CH 60V 11.2A 5DFN
- Stock
- 35,590
- In Stock :
- 35,590
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Gate to Source Voltage (Vgs) :
- 20V
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Current - Continuous Drain (Id) @ 25°C :
- 11.2A Ta
- Number of Terminations :
- 5
- Halogen Free :
- Halogen Free
- Rds On (Max) @ Id, Vgs :
- 12m Ω @ 10A, 10V
- ECCN Code :
- EAR99
- Turn On Delay Time :
- 12 ns
- Rise Time :
- 25ns
- Operating Mode :
- ENHANCEMENT MODE
- Power Dissipation-Max :
- 3.7W Ta 107W Tc
- RoHS Status :
- ROHS3 Compliant
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Pulsed Drain Current-Max (IDM) :
- 247A
- Transistor Element Material :
- SILICON
- JESD-609 Code :
- e3
- FET Type :
- N-Channel
- Terminal Position :
- Dual
- Published :
- 2013
- Mounting Type :
- Surface Mount
- Gate Charge (Qg) (Max) @ Vgs :
- 30nC @ 10V
- Package / Case :
- 8-PowerTDFN, 5 Leads
- Packaging :
- Tape and Reel (TR)
- Pbfree Code :
- yes
- Radiation Hardening :
- No
- Pin Count :
- 5
- Lead Free :
- Lead Free
- Case Connection :
- DRAIN
- Operating Temperature :
- -55°C~175°C TJ
- Element Configuration :
- Single
- Terminal Finish :
- Tin (Sn)
- Number of Pins :
- 5
- Vgs (Max) :
- ±20V
- Drain to Source Breakdown Voltage :
- 60V
- Continuous Drain Current (ID) :
- 11.2A
- Vgs(th) (Max) @ Id :
- 2.3V @ 250μA
- Number of Elements :
- 1
- Power Dissipation :
- 107W
- Factory Lead Time :
- 38 Weeks
- Lifecycle Status :
- ACTIVE, NOT REC (Last Updated: 1 week ago)
- Input Capacitance (Ciss) (Max) @ Vds :
- 1460pF @ 25V
- Turn-Off Delay Time :
- 20 ns
- Surface Mount :
- yes
- Terminal Form :
- Flat
- Fall Time (Typ) :
- 10 ns
- Datasheets
- NVMFS5844NLT3G

N-Channel Tape & Reel (TR) 12m Ω @ 10A, 10V ±20V 1460pF @ 25V 30nC @ 10V 8-PowerTDFN, 5 Leads
NVMFS5844NLT3G Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 1460pF @ 25V.This device conducts a continuous drain current (ID) of 11.2A, which is the maximum continuous current transistor can conduct.Using VGS=60V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 60V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 20 ns occurs as the input capacitance charges before drain current conduction commences.Pulsed drain current is maximum rated peak drain current 247A.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 12 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.In order to reduce power consumption, this device uses a drive voltage of 4.5V 10V volts (4.5V 10V).
NVMFS5844NLT3G Features
a continuous drain current (ID) of 11.2A
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 20 ns
based on its rated peak drain current 247A.
NVMFS5844NLT3G Applications
There are a lot of ON Semiconductor
NVMFS5844NLT3G applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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