NVMFS5834NLT3G

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Mfr.Part #
NVMFS5834NLT3G
Manufacturer
onsemi
Package / Case
8-PowerTDFN
Datasheet
Download
Description
MOSFET N-CH 40V 14A/75A 5DFN
Stock
32,464
In Stock :
32,464

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Surface Mount :
yes
Terminal Position :
Dual
Pin Count :
5
Gate to Source Voltage (Vgs) :
20V
Pbfree Code :
yes
Current - Continuous Drain (Id) @ 25°C :
14A Ta 75A Tc
Case Connection :
DRAIN
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Published :
2012
Reach Compliance Code :
not_compliant
Turn On Delay Time :
10 ns
Lifecycle Status :
ACTIVE, NOT REC (Last Updated: 3 days ago)
ECCN Code :
EAR99
Turn-Off Delay Time :
17.4 ns
Transistor Element Material :
SILICON
Terminal Finish :
Tin (Sn)
Terminal Form :
Flat
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Lead Free :
Lead Free
Packaging :
Tape and Reel (TR)
Rds On (Max) @ Id, Vgs :
9.3m Ω @ 20A, 10V
Halogen Free :
Halogen Free
Element Configuration :
Single
Fall Time (Typ) :
6.6 ns
Number of Pins :
5
Drain to Source Breakdown Voltage :
40V
Vgs(th) (Max) @ Id :
3V @ 250µA
Rise Time :
56.4ns
RoHS Status :
ROHS3 Compliant
Number of Elements :
1
Vgs (Max) :
±20V
Operating Temperature :
-55°C~175°C TJ
Factory Lead Time :
38 Weeks
JESD-609 Code :
e3
Continuous Drain Current (ID) :
75A
Number of Terminations :
5
Operating Mode :
ENHANCEMENT MODE
FET Type :
N-Channel
Pulsed Drain Current-Max (IDM) :
276A
Input Capacitance (Ciss) (Max) @ Vds :
1231pF @ 20V
Mounting Type :
Surface Mount
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Gate Charge (Qg) (Max) @ Vgs :
24nC @ 10V
Package / Case :
8-PowerTDFN
Power Dissipation-Max :
3.6W Ta 107W Tc
Number of Channels :
1
Avalanche Energy Rating (Eas) :
48 mJ
Drive Voltage (Max Rds On,Min Rds On) :
4.5V 10V
Datasheets
NVMFS5834NLT3G
Introducing Transistors - FETs, MOSFETs - Single onsemi NVMFS5834NLT3G from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:5, Operating Temperature:-55°C~175°C TJ, Number of Terminations:5, Mounting Type:Surface Mount, Package / Case:8-PowerTDFN, Number of Channels:1, NVMFS5834NLT3G pinout, NVMFS5834NLT3G datasheet PDF, NVMFS5834NLT3G amp .Beyond Transistors - FETs, MOSFETs - Single onsemi NVMFS5834NLT3G ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi NVMFS5834NLT3G


N-Channel Tape & Reel (TR) 9.3m Ω @ 20A, 10V ±20V 1231pF @ 20V 24nC @ 10V 8-PowerTDFN

NVMFS5834NLT3G Overview


When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 48 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 1231pF @ 20V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 75A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=40V. And this device has 40V drain to source breakdown voltage.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 17.4 ns.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 276A.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 10 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.By using drive voltage (4.5V 10V), this device helps reduce its overall power consumption.

NVMFS5834NLT3G Features


the avalanche energy rating (Eas) is 48 mJ
a continuous drain current (ID) of 75A
a drain-to-source breakdown voltage of 40V voltage
the turn-off delay time is 17.4 ns
based on its rated peak drain current 276A.


NVMFS5834NLT3G Applications


There are a lot of ON Semiconductor
NVMFS5834NLT3G applications of single MOSFETs transistors.


  • LCD/LED TV
  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
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