NVMFS5833NT1G
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- Mfr.Part #
- NVMFS5833NT1G
- Manufacturer
- onsemi
- Package / Case
- 8-PowerTDFN
- Datasheet
- Download
- Description
- MOSFET N-CH 40V 16A 5DFN
- Stock
- 25,485
- In Stock ：
- 25,485
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Power Dissipation-Max :
- 3.7W Ta 112W Tc
- ECCN Code :
- EAR99
- Drain Current-Max (Abs) (ID) :
- 86A
- Drain to Source Voltage (Vdss) :
- 40V
- FET Type :
- N-Channel
- Mounting Type :
- Surface Mount
- Rise Time :
- 19.5ns
- Packaging :
- Tape and Reel (TR)
- Fall Time (Typ) :
- 3 ns
- Turn-Off Delay Time :
- 23.6 ns
- Configuration :
- Single
- Vgs (Max) :
- ±20V
- Package / Case :
- 8-PowerTDFN
- Published :
- 2014
- Operating Temperature :
- -55°C~175°C TJ
- Turn On Delay Time :
- 10.23 ns
- Reach Compliance Code :
- not_compliant
- Lifecycle Status :
- ACTIVE, NOT REC (Last Updated: 1 week ago)
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- RoHS Status :
- ROHS3 Compliant
- JESD-609 Code :
- e3
- Vgs(th) (Max) @ Id :
- 3.5V @ 250µA
- Terminal Finish :
- Tin (Sn)
- Pin Count :
- 5
- Mount :
- Surface Mount
- Pbfree Code :
- yes
- Lead Free :
- Lead Free
- Rds On (Max) @ Id, Vgs :
- 7.5m Ω @ 40A, 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 1714pF @ 25V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Factory Lead Time :
- 38 Weeks
- Gate to Source Voltage (Vgs) :
- 20V
- Gate Charge (Qg) (Max) @ Vgs :
- 32.5nC @ 10V
- Number of Pins :
- 5
- Continuous Drain Current (ID) :
- 16A
- Current - Continuous Drain (Id) @ 25°C :
- 16A Ta
- Datasheets
- NVMFS5833NT1G
N-Channel Tape & Reel (TR) 7.5m Ω @ 40A, 10V ±20V 1714pF @ 25V 32.5nC @ 10V 40V 8-PowerTDFN
NVMFS5833NT1G Overview
A device's maximum input capacitance is 1714pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 16A for this device. Drain current refers to the capacity of the device to conduct continuous current.Its drain current is 86A, and it is the maximum continuous current the device can conduct.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 23.6 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 10.23 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.To operate this transistor, you need to apply a 40V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.
NVMFS5833NT1G Features
a continuous drain current (ID) of 16A
the turn-off delay time is 23.6 ns
a 40V drain to source voltage (Vdss)
NVMFS5833NT1G Applications
There are a lot of ON Semiconductor
NVMFS5833NT1G applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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