NVMFS5832NLWFT3G

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Mfr.Part #
NVMFS5832NLWFT3G
Manufacturer
onsemi
Package / Case
8-PowerTDFN
Datasheet
Download
Description
MOSFET N-CH 40V 21A 5DFN
Stock
26,521
In Stock :
26,521

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Turn On Delay Time :
13 ns
Published :
2013
Power Dissipation-Max :
3.7W Ta 127W Tc
Number of Channels :
1
Gate Charge (Qg) (Max) @ Vgs :
51nC @ 10V
Vgs (Max) :
±20V
FET Type :
N-Channel
Package / Case :
8-PowerTDFN
Vgs(th) (Max) @ Id :
2.4V @ 250μA
Lead Free :
Lead Free
JESD-609 Code :
e3
Lifecycle Status :
ACTIVE, NOT REC (Last Updated: 4 days ago)
Mounting Type :
Surface Mount
Surface Mount :
yes
Gate to Source Voltage (Vgs) :
20V
Rds On (Max) @ Id, Vgs :
4.2m Ω @ 20A, 10V
Operating Temperature :
-55°C~175°C TJ
Drive Voltage (Max Rds On,Min Rds On) :
4.5V 10V
Terminal Finish :
Tin (Sn)
Halogen Free :
Halogen Free
Turn-Off Delay Time :
27 ns
Current - Continuous Drain (Id) @ 25°C :
21A Ta
Factory Lead Time :
38 Weeks
Drain to Source Breakdown Voltage :
40V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Element Configuration :
Single
Pbfree Code :
yes
ECCN Code :
EAR99
Fall Time (Typ) :
8 ns
Rise Time :
24ns
Number of Pins :
5
Continuous Drain Current (ID) :
120A
Pin Count :
5
Input Capacitance (Ciss) (Max) @ Vds :
2700pF @ 25V
Packaging :
Tape and Reel (TR)
RoHS Status :
ROHS3 Compliant
Radiation Hardening :
No
Datasheets
NVMFS5832NLWFT3G
Introducing Transistors - FETs, MOSFETs - Single onsemi NVMFS5832NLWFT3G from Chip IC,where excellence meets affordability. This product stands out with its Number of Channels:1, Package / Case:8-PowerTDFN, Mounting Type:Surface Mount, Operating Temperature:-55°C~175°C TJ, Number of Pins:5, NVMFS5832NLWFT3G pinout, NVMFS5832NLWFT3G datasheet PDF, NVMFS5832NLWFT3G amp .Beyond Transistors - FETs, MOSFETs - Single onsemi NVMFS5832NLWFT3G ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi NVMFS5832NLWFT3G


N-Channel Tape & Reel (TR) 4.2m Ω @ 20A, 10V ±20V 2700pF @ 25V 51nC @ 10V 8-PowerTDFN

NVMFS5832NLWFT3G Overview


The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 2700pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 120A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=40V. And this device has 40V drain to source breakdown voltage.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 27 ns.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 13 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.By using drive voltage (4.5V 10V), this device helps reduce its overall power consumption.

NVMFS5832NLWFT3G Features


a continuous drain current (ID) of 120A
a drain-to-source breakdown voltage of 40V voltage
the turn-off delay time is 27 ns


NVMFS5832NLWFT3G Applications


There are a lot of ON Semiconductor
NVMFS5832NLWFT3G applications of single MOSFETs transistors.


  • LCD/LED TV
  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
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