NVMFS5832NLT3G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Finish :

Tin (Sn)

Continuous Drain Current (ID) :

21A

Lead Free :

Lead Free

Power Dissipation :

3.7W

Number of Elements :

1

Drain-source On Resistance-Max :

0.0072Ohm

FET Type :

N-Channel

Input Capacitance (Ciss) (Max) @ Vds :

2700pF @ 25V

Turn On Delay Time :

13 ns

Package / Case :

8-PowerTDFN

Element Configuration :

Single

Published :

2013

Current - Continuous Drain (Id) @ 25°C :

21A Ta

DS Breakdown Voltage-Min :

40V

Factory Lead Time :

38 Weeks

Vgs (Max) :

±20V

Surface Mount :

yes

Case Connection :

DRAIN

Operating Temperature :

-55°C~175°C TJ

Number of Terminations :

5

Mounting Type :

Surface Mount

JESD-609 Code :

e3

Turn-Off Delay Time :

27 ns

Pin Count :

5

Fall Time (Typ) :

8 ns

Rds On (Max) @ Id, Vgs :

4.2m Ω @ 20A, 10V

Terminal Position :

Dual

Transistor Element Material :

SILICON

Gate to Source Voltage (Vgs) :

20V

Terminal Form :

Flat

Lifecycle Status :

ACTIVE, NOT REC (Last Updated: 3 days ago)

Halogen Free :

Halogen Free

Vgs(th) (Max) @ Id :

2.4V @ 250μA

Rise Time :

24ns

Operating Mode :

ENHANCEMENT MODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Number of Pins :

5

Packaging :

Tape and Reel (TR)

ECCN Code :

EAR99

Drain to Source Voltage (Vdss) :

40V

Gate Charge (Qg) (Max) @ Vgs :

51nC @ 10V

Reach Compliance Code :

not_compliant

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

RoHS Status :

ROHS3 Compliant

Pbfree Code :

yes

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Power Dissipation-Max :

3.7W Ta 127W Tc