NVMFS5830NLWFT3G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Form :

Flat

Number of Pins :

5

Drain-source On Resistance-Max :

0.0036Ohm

Terminal Finish :

Tin (Sn)

Lead Free :

Lead Free

Gate to Source Voltage (Vgs) :

20V

Continuous Drain Current (ID) :

29A

Current - Continuous Drain (Id) @ 25°C :

29A Ta

Published :

2013

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn-Off Delay Time :

40 ns

Transistor Element Material :

SILICON

Vgs(th) (Max) @ Id :

2.4V @ 250μA

Pin Count :

5

Power Dissipation-Max :

3.8W Ta 158W Tc

Case Connection :

DRAIN

Operating Mode :

ENHANCEMENT MODE

DS Breakdown Voltage-Min :

40V

Package / Case :

8-PowerTDFN

ECCN Code :

EAR99

Turn On Delay Time :

22 ns

Radiation Hardening :

No

Fall Time (Typ) :

27 ns

FET Type :

N-Channel

Drain to Source Voltage (Vdss) :

40V

Number of Elements :

1

RoHS Status :

ROHS3 Compliant

Element Configuration :

Single

Pbfree Code :

yes

JESD-609 Code :

e3

Factory Lead Time :

38 Weeks

Operating Temperature :

-55°C~175°C TJ

Rise Time :

32ns

Gate Charge (Qg) (Max) @ Vgs :

113nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

5880pF @ 25V

Surface Mount :

yes

Number of Terminations :

5

Mounting Type :

Surface Mount

Rds On (Max) @ Id, Vgs :

2.3m Ω @ 20A, 10V

Vgs (Max) :

±20V

Halogen Free :

Halogen Free

Packaging :

Tape and Reel (TR)

Number of Channels :

1

Lifecycle Status :

LAST SHIPMENTS (Last Updated: 4 days ago)

Terminal Position :

Dual