NVMFS5830NLWFT1G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Lifecycle Status :

ACTIVE, NOT REC (Last Updated: 4 days ago)

Continuous Drain Current (ID) :

185A

Drain-source On Resistance-Max :

0.0036Ohm

Radiation Hardening :

No

Number of Pins :

5

Power Dissipation-Max :

3.8W Ta 158W Tc

Element Configuration :

Single

Terminal Position :

Dual

Drain to Source Breakdown Voltage :

40V

Rise Time :

32ns

Pbfree Code :

yes

Rds On (Max) @ Id, Vgs :

2.3m Ω @ 20A, 10V

Lead Free :

Lead Free

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Halogen Free :

Halogen Free

Turn On Delay Time :

22 ns

Surface Mount :

yes

Fall Time (Typ) :

27 ns

Mounting Type :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

113nC @ 10V

Pin Count :

5

Transistor Element Material :

SILICON

RoHS Status :

ROHS3 Compliant

Package / Case :

8-PowerTDFN

Factory Lead Time :

38 Weeks

Gate to Source Voltage (Vgs) :

20V

Case Connection :

DRAIN

Current - Continuous Drain (Id) @ 25°C :

29A Ta

Operating Mode :

ENHANCEMENT MODE

Terminal Form :

Flat

Number of Channels :

1

Operating Temperature :

-55°C~175°C TJ

Vgs (Max) :

±20V

Number of Elements :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

ECCN Code :

EAR99

Packaging :

Tape and Reel (TR)

Published :

2013

Turn-Off Delay Time :

40 ns

Terminal Finish :

Tin (Sn)

Input Capacitance (Ciss) (Max) @ Vds :

5880pF @ 25V

JESD-609 Code :

e3

Number of Terminations :

5

Vgs(th) (Max) @ Id :

2.4V @ 250μA

FET Type :

N-Channel