NVMFS5826NLWFT3G

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Mfr.Part #
NVMFS5826NLWFT3G
Manufacturer
onsemi
Package / Case
8-PowerTDFN
Datasheet
Download
Description
MOSFET N-CH 60V 8A 5DFN
Stock
33,823
In Stock :
33,823

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Gate to Source Voltage (Vgs) :
20V
Factory Lead Time :
38 Weeks
Turn-Off Delay Time :
15 ns
Drive Voltage (Max Rds On,Min Rds On) :
4.5V 10V
Continuous Drain Current (ID) :
26A
Terminal Finish :
Tin (Sn)
Mounting Type :
Surface Mount
Published :
2013
Fall Time (Typ) :
24 ns
Package / Case :
8-PowerTDFN
Gate Charge (Qg) (Max) @ Vgs :
17nC @ 10V
Rds On (Max) @ Id, Vgs :
24m Ω @ 10A, 10V
Lead Free :
Lead Free
FET Type :
N-Channel
Power Dissipation-Max :
3.6W Ta 39W Tc
Element Configuration :
Single
RoHS Status :
ROHS3 Compliant
Lifecycle Status :
LAST SHIPMENTS (Last Updated: 4 days ago)
Halogen Free :
Halogen Free
Operating Temperature :
-55°C~175°C TJ
Current - Continuous Drain (Id) @ 25°C :
8A Ta
Number of Channels :
1
JESD-609 Code :
e3
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
ECCN Code :
EAR99
Vgs(th) (Max) @ Id :
2.5V @ 250μA
Drain to Source Voltage (Vdss) :
60V
Pin Count :
5
Surface Mount :
yes
Radiation Hardening :
No
Pbfree Code :
yes
Packaging :
Tape and Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds :
850pF @ 25V
Number of Pins :
5
Turn On Delay Time :
9 ns
Rise Time :
32ns
Vgs (Max) :
±20V
Datasheets
NVMFS5826NLWFT3G
Introducing Transistors - FETs, MOSFETs - Single onsemi NVMFS5826NLWFT3G from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Surface Mount, Package / Case:8-PowerTDFN, Operating Temperature:-55°C~175°C TJ, Number of Channels:1, Number of Pins:5, NVMFS5826NLWFT3G pinout, NVMFS5826NLWFT3G datasheet PDF, NVMFS5826NLWFT3G amp .Beyond Transistors - FETs, MOSFETs - Single onsemi NVMFS5826NLWFT3G ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi NVMFS5826NLWFT3G


N-Channel Tape & Reel (TR) 24m Ω @ 10A, 10V ±20V 850pF @ 25V 17nC @ 10V 60V 8-PowerTDFN

NVMFS5826NLWFT3G Overview


A device's maximum input capacitance is 850pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 26A for this device. Drain current refers to the capacity of the device to conduct continuous current.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 15 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 9 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.To operate this transistor, you need to apply a 60V drain to source voltage (Vdss).This device uses no drive voltage (4.5V 10V) to reduce its overall power consumption.

NVMFS5826NLWFT3G Features


a continuous drain current (ID) of 26A
the turn-off delay time is 15 ns
a 60V drain to source voltage (Vdss)


NVMFS5826NLWFT3G Applications


There are a lot of ON Semiconductor
NVMFS5826NLWFT3G applications of single MOSFETs transistors.


  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
  • DC-to-DC converters
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