NVMFS5826NLWFT3G
- Mfr.Part #
- NVMFS5826NLWFT3G
- Manufacturer
- onsemi
- Package / Case
- 8-PowerTDFN
- Datasheet
- Download
- Description
- MOSFET N-CH 60V 8A 5DFN
- Stock
- 33,823
- In Stock :
- 33,823
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Gate to Source Voltage (Vgs) :
- 20V
- Factory Lead Time :
- 38 Weeks
- Turn-Off Delay Time :
- 15 ns
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Continuous Drain Current (ID) :
- 26A
- Terminal Finish :
- Tin (Sn)
- Mounting Type :
- Surface Mount
- Published :
- 2013
- Fall Time (Typ) :
- 24 ns
- Package / Case :
- 8-PowerTDFN
- Gate Charge (Qg) (Max) @ Vgs :
- 17nC @ 10V
- Rds On (Max) @ Id, Vgs :
- 24m Ω @ 10A, 10V
- Lead Free :
- Lead Free
- FET Type :
- N-Channel
- Power Dissipation-Max :
- 3.6W Ta 39W Tc
- Element Configuration :
- Single
- RoHS Status :
- ROHS3 Compliant
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 4 days ago)
- Halogen Free :
- Halogen Free
- Operating Temperature :
- -55°C~175°C TJ
- Current - Continuous Drain (Id) @ 25°C :
- 8A Ta
- Number of Channels :
- 1
- JESD-609 Code :
- e3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- ECCN Code :
- EAR99
- Vgs(th) (Max) @ Id :
- 2.5V @ 250μA
- Drain to Source Voltage (Vdss) :
- 60V
- Pin Count :
- 5
- Surface Mount :
- yes
- Radiation Hardening :
- No
- Pbfree Code :
- yes
- Packaging :
- Tape and Reel (TR)
- Input Capacitance (Ciss) (Max) @ Vds :
- 850pF @ 25V
- Number of Pins :
- 5
- Turn On Delay Time :
- 9 ns
- Rise Time :
- 32ns
- Vgs (Max) :
- ±20V
- Datasheets
- NVMFS5826NLWFT3G

N-Channel Tape & Reel (TR) 24m Ω @ 10A, 10V ±20V 850pF @ 25V 17nC @ 10V 60V 8-PowerTDFN
NVMFS5826NLWFT3G Overview
A device's maximum input capacitance is 850pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 26A for this device. Drain current refers to the capacity of the device to conduct continuous current.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 15 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 9 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.To operate this transistor, you need to apply a 60V drain to source voltage (Vdss).This device uses no drive voltage (4.5V 10V) to reduce its overall power consumption.
NVMFS5826NLWFT3G Features
a continuous drain current (ID) of 26A
the turn-off delay time is 15 ns
a 60V drain to source voltage (Vdss)
NVMFS5826NLWFT3G Applications
There are a lot of ON Semiconductor
NVMFS5826NLWFT3G applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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