NVMFS5826NLT3G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Rds On (Max) @ Id, Vgs :

24m Ω @ 10A, 10V

Drain to Source Voltage (Vdss) :

60V

Lifecycle Status :

ACTIVE, NOT REC (Last Updated: 3 days ago)

Current - Continuous Drain (Id) @ 25°C :

8A Ta

Terminal Finish :

Tin (Sn)

Number of Pins :

5

Fall Time (Typ) :

24 ns

Power Dissipation-Max :

3.6W Ta 39W Tc

Operating Temperature :

-55°C~175°C TJ

Pin Count :

5

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Published :

2013

Case Connection :

DRAIN

Continuous Drain Current (ID) :

8A

Number of Terminations :

5

Halogen Free :

Halogen Free

Turn-Off Delay Time :

15 ns

FET Type :

N-Channel

Number of Elements :

1

Vgs (Max) :

±20V

Terminal Position :

Dual

Transistor Element Material :

SILICON

Surface Mount :

yes

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Package / Case :

8-PowerTDFN

DS Breakdown Voltage-Min :

60V

Rise Time :

32ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pbfree Code :

yes

Avalanche Energy Rating (Eas) :

20 mJ

Power Dissipation :

3.6W

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Drain Current-Max (Abs) (ID) :

26A

Factory Lead Time :

38 Weeks

JESD-609 Code :

e3

RoHS Status :

ROHS3 Compliant

Mounting Type :

Surface Mount

Packaging :

Tape and Reel (TR)

Drain-source On Resistance-Max :

0.032Ohm

ECCN Code :

EAR99

Gate to Source Voltage (Vgs) :

20V

Lead Free :

Lead Free

Element Configuration :

Single

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Operating Mode :

ENHANCEMENT MODE

Reach Compliance Code :

not_compliant

Gate Charge (Qg) (Max) @ Vgs :

17nC @ 10V

Terminal Form :

Flat

Turn On Delay Time :

9 ns

Input Capacitance (Ciss) (Max) @ Vds :

850pF @ 25V