NVMFS5113PLWFT1G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Terminal Finish :

Tin (Sn)

Avalanche Energy Rating (Eas) :

315 mJ

Rds On (Max) @ Id, Vgs :

14m Ω @ 17A, 10V

Mounting Type :

Surface Mount

Current - Continuous Drain (Id) @ 25°C :

10A Ta 64A Tc

Case Connection :

DRAIN

Operating Temperature :

-55°C~175°C TJ

Package / Case :

8-PowerTDFN, 5 Leads

Surface Mount :

yes

FET Type :

P-Channel

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminations :

5

Configuration :

SINGLE WITH BUILT-IN DIODE

Input Capacitance (Ciss) (Max) @ Vds :

4400pF @ 25V

Factory Lead Time :

17 Weeks

Drain to Source Voltage (Vdss) :

60V

Power Dissipation-Max :

3.8W Ta 150W Tc

Series :

Automotive, AEC-Q101

RoHS Status :

RoHS Compliant

Packaging :

Tape and Reel (TR)

Drain-source On Resistance-Max :

0.014Ohm

Published :

2014

Transistor Element Material :

SILICON

Pbfree Code :

yes

Gate Charge (Qg) (Max) @ Vgs :

83nC @ 10V

Terminal Position :

Dual

Pulsed Drain Current-Max (IDM) :

415A

DS Breakdown Voltage-Min :

60V

Operating Mode :

ENHANCEMENT MODE

Terminal Form :

Flat

JESD-30 Code :

R-PDSO-F5

Lead Free :

Lead Free

JESD-609 Code :

e3

Number of Elements :

1

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

2.5V @ 250μA