NVMFS5113PLT1G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Packaging :

Tape and Reel (TR)

Power Dissipation :

150W

Turn-Off Delay Time :

54 ns

Drain to Source Voltage (Vdss) :

60V

Power Dissipation-Max :

3.8W Ta 150W Tc

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Case Connection :

DRAIN

Rds On (Max) @ Id, Vgs :

14m Ω @ 17A, 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Form :

Flat

Mounting Type :

Surface Mount

Pbfree Code :

yes

Factory Lead Time :

14 Weeks

Reach Compliance Code :

not_compliant

Lead Free :

Lead Free

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Max Junction Temperature (Tj) :

175°C

Gate to Source Voltage (Vgs) :

20V

Threshold Voltage :

-2.5V

Configuration :

SINGLE WITH BUILT-IN DIODE

Drain to Source Breakdown Voltage :

-60V

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

JESD-30 Code :

R-PDSO-F5

Number of Channels :

1

FET Type :

P-Channel

Number of Elements :

1

Height :

1.1mm

Terminal Finish :

Tin (Sn)

JESD-609 Code :

e3

Current - Continuous Drain (Id) @ 25°C :

10A Ta 64A Tc

Input Capacitance (Ciss) (Max) @ Vds :

4400pF @ 25V

Vgs (Max) :

±20V

Operating Temperature :

-55°C~175°C TJ

Number of Terminations :

5

Continuous Drain Current (ID) :

-10A

Mount :

Surface Mount

Terminal Position :

Dual

Package / Case :

8-PowerTDFN

Transistor Element Material :

SILICON

RoHS Status :

ROHS3 Compliant

Published :

2014

Gate Charge (Qg) (Max) @ Vgs :

83nC @ 10V

Operating Mode :

ENHANCEMENT MODE

Turn On Delay Time :

15 ns

Number of Pins :

8