NVMFS4C302NT1G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Finish :

Tin (Sn)

Terminal Form :

Flat

Reach Compliance Code :

not_compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain Current-Max (Abs) (ID) :

43A

Pulsed Drain Current-Max (IDM) :

900A

Case Connection :

DRAIN

Number of Terminations :

5

Rds On (Max) @ Id, Vgs :

1.15m Ω @ 30A, 10V

Series :

Automotive, AEC-Q101

Package / Case :

8-PowerTDFN, 5 Leads

Mounting Type :

Surface Mount

Packaging :

Tape and Reel (TR)

JESD-609 Code :

e3

Input Capacitance (Ciss) (Max) @ Vds :

5780pF @ 15V

Gate Charge (Qg) (Max) @ Vgs :

82nC @ 10V

Terminal Position :

Dual

Configuration :

SINGLE WITH BUILT-IN DIODE

Current - Continuous Drain (Id) @ 25°C :

43A Ta 241A Tc

Transistor Element Material :

SILICON

Power Dissipation-Max :

3.75W Ta 115W Tc

Operating Temperature :

-55°C~175°C TJ

Avalanche Energy Rating (Eas) :

186 mJ

Vgs (Max) :

±20V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Vgs(th) (Max) @ Id :

2.2V @ 250µA

Pbfree Code :

yes

Surface Mount :

yes

Drain to Source Voltage (Vdss) :

30V

DS Breakdown Voltage-Min :

30V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

FET Type :

N-Channel

Factory Lead Time :

7 Weeks

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Drain-source On Resistance-Max :

0.0017Ohm

JESD-30 Code :

R-PDSO-F5

Number of Elements :

1

Operating Mode :

ENHANCEMENT MODE

RoHS Status :

ROHS3 Compliant