NVMFS4C05NWFT1G

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Mfr.Part #
NVMFS4C05NWFT1G
Manufacturer
onsemi
Package / Case
8-PowerTDFN
Datasheet
Download
Description
MOSFET N-CH 30V 24.7A/116A 5DFN
Stock
19,735
In Stock :
19,735

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Element Configuration :
Single
Rds On (Max) @ Id, Vgs :
3.4m Ω @ 30A, 10V
FET Type :
N-Channel
Lead Free :
Lead Free
Terminal Finish :
Tin (Sn)
Mounting Type :
Surface Mount
Packaging :
Tape and Reel (TR)
Vgs (Max) :
±20V
Drive Voltage (Max Rds On,Min Rds On) :
4.5V 10V
Operating Temperature :
-55°C~175°C TJ
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Gate Charge (Qg) (Max) @ Vgs :
30nC @ 10V
Package / Case :
8-PowerTDFN
Factory Lead Time :
4 Weeks
Lifecycle Status :
ACTIVE (Last Updated: 1 week ago)
Gate to Source Voltage (Vgs) :
20V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
RoHS Status :
ROHS3 Compliant
Fall Time (Typ) :
5 ns
Rise Time :
26ns
Input Capacitance (Ciss) (Max) @ Vds :
1972pF @ 15V
Current - Continuous Drain (Id) @ 25°C :
24.7A Ta 116A Tc
Number of Channels :
1
Pbfree Code :
yes
Turn On Delay Time :
8 ns
Vgs(th) (Max) @ Id :
2.2V @ 250µA
JESD-609 Code :
e3
Power Dissipation-Max :
3.61W Ta 79W Tc
Turn-Off Delay Time :
26 ns
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Continuous Drain Current (ID) :
116A
Published :
2014
Mount :
Surface Mount
Number of Pins :
8
ECCN Code :
EAR99
Drain to Source Breakdown Voltage :
30V
Reach Compliance Code :
not_compliant
Datasheets
NVMFS4C05NWFT1G
Introducing Transistors - FETs, MOSFETs - Single onsemi NVMFS4C05NWFT1G from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Surface Mount, Operating Temperature:-55°C~175°C TJ, Package / Case:8-PowerTDFN, Number of Channels:1, Number of Pins:8, NVMFS4C05NWFT1G pinout, NVMFS4C05NWFT1G datasheet PDF, NVMFS4C05NWFT1G amp .Beyond Transistors - FETs, MOSFETs - Single onsemi NVMFS4C05NWFT1G ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi NVMFS4C05NWFT1G


N-Channel Tape & Reel (TR) 3.4m Ω @ 30A, 10V ±20V 1972pF @ 15V 30nC @ 10V 8-PowerTDFN

NVMFS4C05NWFT1G Overview


A device's maximal input capacitance is 1972pF @ 15V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 116A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 30V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 26 ns, which is the time to charge the device's input capacitance before drain current conduction begins.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 8 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.This device reduces its overall power consumption by using drive voltage (4.5V 10V).

NVMFS4C05NWFT1G Features


a continuous drain current (ID) of 116A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 26 ns


NVMFS4C05NWFT1G Applications


There are a lot of ON Semiconductor
NVMFS4C05NWFT1G applications of single MOSFETs transistors.


  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
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