NVMFS4C03NWFT1G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Published :

2014

RoHS Status :

ROHS3 Compliant

Operating Mode :

ENHANCEMENT MODE

Packaging :

Tape and Reel (TR)

DS Breakdown Voltage-Min :

30V

Gate Charge (Qg) (Max) @ Vgs :

45.2nC @ 10V

Terminal Form :

Flat

Current - Continuous Drain (Id) @ 25°C :

31.4A Ta 143A Tc

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

JESD-609 Code :

e3

Avalanche Energy Rating (Eas) :

549 mJ

Case Connection :

DRAIN

Drain to Source Voltage (Vdss) :

30V

Number of Terminations :

5

Package / Case :

8-PowerTDFN

Lead Free :

Lead Free

Reach Compliance Code :

not_compliant

Pulsed Drain Current-Max (IDM) :

900A

Power Dissipation-Max :

3.71W Ta 77W Tc

Configuration :

SINGLE WITH BUILT-IN DIODE

Reference Standard :

AEC-Q101

Continuous Drain Current (ID) :

143A

Input Capacitance (Ciss) (Max) @ Vds :

3071pF @ 15V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain-source On Resistance-Max :

0.0024Ohm

FET Type :

N-Channel

Transistor Element Material :

SILICON

Factory Lead Time :

8 Weeks

Rds On (Max) @ Id, Vgs :

2.1m Ω @ 30A, 10V

Terminal Position :

Dual

Mounting Type :

Surface Mount

Vgs(th) (Max) @ Id :

2.2V @ 250µA

Pbfree Code :

yes

JESD-30 Code :

R-PDSO-F5

Terminal Finish :

Tin (Sn)

Number of Elements :

1

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Number of Pins :

8

Mount :

Surface Mount

Vgs (Max) :

±20V

Operating Temperature :

-55°C~175°C TJ