NVMFS4C03NT3G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Continuous Drain Current (ID) :

143A

Pbfree Code :

yes

Vgs (Max) :

±20V

Operating Temperature :

-55°C~175°C TJ

Gate Charge (Qg) (Max) @ Vgs :

45.2nC @ 10V

Rds On (Max) @ Id, Vgs :

2.1m Ω @ 30A, 10V

Drain to Source Voltage (Vdss) :

30V

Drain-source On Resistance-Max :

0.0024Ohm

Avalanche Energy Rating (Eas) :

549 mJ

Power Dissipation-Max :

3.71W Ta 77W Tc

Lifecycle Status :

ACTIVE, NOT REC (Last Updated: 2 days ago)

Operating Mode :

ENHANCEMENT MODE

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Current - Continuous Drain (Id) @ 25°C :

31.4A Ta 143A Tc

Configuration :

SINGLE WITH BUILT-IN DIODE

JESD-609 Code :

e3

DS Breakdown Voltage-Min :

30V

Mount :

Surface Mount

Input Capacitance (Ciss) (Max) @ Vds :

3071pF @ 15V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Reference Standard :

AEC-Q101

Reach Compliance Code :

not_compliant

Vgs(th) (Max) @ Id :

2.2V @ 250µA

Packaging :

Tape and Reel (TR)

FET Type :

N-Channel

Number of Elements :

1

Number of Terminations :

5

Terminal Finish :

Tin (Sn)

Lead Free :

Lead Free

Published :

2014

Terminal Position :

Dual

Pulsed Drain Current-Max (IDM) :

900A

JESD-30 Code :

R-PDSO-F5

Case Connection :

DRAIN

Factory Lead Time :

38 Weeks

Number of Pins :

8

RoHS Status :

ROHS3 Compliant

Mounting Type :

Surface Mount

Transistor Element Material :

SILICON

Terminal Form :

Flat

Package / Case :

8-PowerTDFN