NVMFS4C01NWFT3G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Mode :

ENHANCEMENT MODE

Gate Charge (Qg) (Max) @ Vgs :

139nC @ 10V

Terminal Form :

Flat

Pulsed Drain Current-Max (IDM) :

900A

Terminal Position :

Dual

Lifecycle Status :

ACTIVE, NOT REC (Last Updated: 2 days ago)

Case Connection :

DRAIN

Packaging :

Tape and Reel (TR)

JESD-30 Code :

R-PDSO-F5

Continuous Drain Current (ID) :

319A

FET Type :

N-Channel

Package / Case :

8-PowerTDFN

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Factory Lead Time :

38 Weeks

JESD-609 Code :

e3

Mount :

Surface Mount

Terminal Finish :

Tin (Sn)

Current - Continuous Drain (Id) @ 25°C :

49A Ta 319A Tc

Power Dissipation-Max :

3.84W Ta 161W Tc

Configuration :

SINGLE WITH BUILT-IN DIODE

DS Breakdown Voltage-Min :

30V

Pbfree Code :

yes

Drain to Source Voltage (Vdss) :

30V

Mounting Type :

Surface Mount

Input Capacitance (Ciss) (Max) @ Vds :

10144pF @ 15V

Vgs (Max) :

±20V

Lead Free :

Lead Free

Operating Temperature :

-55°C~175°C TJ

Transistor Element Material :

SILICON

Number of Terminations :

5

Reach Compliance Code :

not_compliant

Number of Elements :

1

Vgs(th) (Max) @ Id :

2.2V @ 250µA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain-source On Resistance-Max :

0.00095Ohm

Number of Pins :

8

Rds On (Max) @ Id, Vgs :

0.9m Ω @ 30A, 10V

Published :

2014

RoHS Status :

ROHS3 Compliant

Reference Standard :

AEC-Q101