NVMFS4C01NWFT1G

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Mfr.Part #
NVMFS4C01NWFT1G
Manufacturer
onsemi
Package / Case
8-PowerTDFN
Datasheet
Download
Description
MOSFET N-CH 30V 49A/319A 5DFN
Stock
3,842
In Stock :
3,842

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Terminal Form :
Flat
Transistor Element Material :
SILICON
Current - Continuous Drain (Id) @ 25°C :
49A Ta 319A Tc
Operating Mode :
ENHANCEMENT MODE
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
RoHS Status :
ROHS3 Compliant
DS Breakdown Voltage-Min :
30V
Configuration :
SINGLE WITH BUILT-IN DIODE
Operating Temperature :
-55°C~175°C TJ
Drive Voltage (Max Rds On,Min Rds On) :
4.5V 10V
Continuous Drain Current (ID) :
319A
Lead Free :
Lead Free
FET Type :
N-Channel
Mount :
Surface Mount
JESD-30 Code :
R-PDSO-F5
Mounting Type :
Surface Mount
Vgs(th) (Max) @ Id :
2.2V @ 250µA
Package / Case :
8-PowerTDFN
Factory Lead Time :
6 Weeks
Published :
2014
Packaging :
Tape and Reel (TR)
Terminal Finish :
Tin (Sn)
Case Connection :
DRAIN
Rds On (Max) @ Id, Vgs :
0.9m Ω @ 30A, 10V
Lifecycle Status :
ACTIVE (Last Updated: 1 day ago)
Reference Standard :
AEC-Q101
Number of Pins :
8
Pulsed Drain Current-Max (IDM) :
900A
Drain-source On Resistance-Max :
0.00095Ohm
Vgs (Max) :
±20V
Drain to Source Voltage (Vdss) :
30V
Power Dissipation-Max :
3.84W Ta 161W Tc
Number of Terminations :
5
JESD-609 Code :
e3
Reach Compliance Code :
not_compliant
Input Capacitance (Ciss) (Max) @ Vds :
10144pF @ 15V
Gate Charge (Qg) (Max) @ Vgs :
139nC @ 10V
Number of Elements :
1
Terminal Position :
Dual
Pbfree Code :
yes
Datasheets
NVMFS4C01NWFT1G
Introducing Transistors - FETs, MOSFETs - Single onsemi NVMFS4C01NWFT1G from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~175°C TJ, Mounting Type:Surface Mount, Package / Case:8-PowerTDFN, Number of Pins:8, Number of Terminations:5, NVMFS4C01NWFT1G pinout, NVMFS4C01NWFT1G datasheet PDF, NVMFS4C01NWFT1G amp .Beyond Transistors - FETs, MOSFETs - Single onsemi NVMFS4C01NWFT1G ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi NVMFS4C01NWFT1G


N-Channel Tape & Reel (TR) 0.9m Ω @ 30A, 10V ±20V 10144pF @ 15V 139nC @ 10V 30V 8-PowerTDFN

NVMFS4C01NWFT1G Overview


A device's maximum input capacitance is 10144pF @ 15V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 319A for this device. Drain current refers to the capacity of the device to conduct continuous current.Its maximum pulsed drain current is 900A, which is also its maximum rating peak drainage current.For normal operation, maintain the DS breakdown voltage above 30V.To operate this transistor, you need to apply a 30V drain to source voltage (Vdss).This device uses no drive voltage (4.5V 10V) to reduce its overall power consumption.

NVMFS4C01NWFT1G Features


a continuous drain current (ID) of 319A
based on its rated peak drain current 900A.
a 30V drain to source voltage (Vdss)


NVMFS4C01NWFT1G Applications


There are a lot of ON Semiconductor
NVMFS4C01NWFT1G applications of single MOSFETs transistors.


  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
  • DC-to-DC converters
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