NVMFS4C01NWFT1G
- Mfr.Part #
- NVMFS4C01NWFT1G
- Manufacturer
- onsemi
- Package / Case
- 8-PowerTDFN
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 49A/319A 5DFN
- Stock
- 3,842
- In Stock :
- 3,842
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Terminal Form :
- Flat
- Transistor Element Material :
- SILICON
- Current - Continuous Drain (Id) @ 25°C :
- 49A Ta 319A Tc
- Operating Mode :
- ENHANCEMENT MODE
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- RoHS Status :
- ROHS3 Compliant
- DS Breakdown Voltage-Min :
- 30V
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Operating Temperature :
- -55°C~175°C TJ
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Continuous Drain Current (ID) :
- 319A
- Lead Free :
- Lead Free
- FET Type :
- N-Channel
- Mount :
- Surface Mount
- JESD-30 Code :
- R-PDSO-F5
- Mounting Type :
- Surface Mount
- Vgs(th) (Max) @ Id :
- 2.2V @ 250µA
- Package / Case :
- 8-PowerTDFN
- Factory Lead Time :
- 6 Weeks
- Published :
- 2014
- Packaging :
- Tape and Reel (TR)
- Terminal Finish :
- Tin (Sn)
- Case Connection :
- DRAIN
- Rds On (Max) @ Id, Vgs :
- 0.9m Ω @ 30A, 10V
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Reference Standard :
- AEC-Q101
- Number of Pins :
- 8
- Pulsed Drain Current-Max (IDM) :
- 900A
- Drain-source On Resistance-Max :
- 0.00095Ohm
- Vgs (Max) :
- ±20V
- Drain to Source Voltage (Vdss) :
- 30V
- Power Dissipation-Max :
- 3.84W Ta 161W Tc
- Number of Terminations :
- 5
- JESD-609 Code :
- e3
- Reach Compliance Code :
- not_compliant
- Input Capacitance (Ciss) (Max) @ Vds :
- 10144pF @ 15V
- Gate Charge (Qg) (Max) @ Vgs :
- 139nC @ 10V
- Number of Elements :
- 1
- Terminal Position :
- Dual
- Pbfree Code :
- yes
- Datasheets
- NVMFS4C01NWFT1G

N-Channel Tape & Reel (TR) 0.9m Ω @ 30A, 10V ±20V 10144pF @ 15V 139nC @ 10V 30V 8-PowerTDFN
NVMFS4C01NWFT1G Overview
A device's maximum input capacitance is 10144pF @ 15V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 319A for this device. Drain current refers to the capacity of the device to conduct continuous current.Its maximum pulsed drain current is 900A, which is also its maximum rating peak drainage current.For normal operation, maintain the DS breakdown voltage above 30V.To operate this transistor, you need to apply a 30V drain to source voltage (Vdss).This device uses no drive voltage (4.5V 10V) to reduce its overall power consumption.
NVMFS4C01NWFT1G Features
a continuous drain current (ID) of 319A
based on its rated peak drain current 900A.
a 30V drain to source voltage (Vdss)
NVMFS4C01NWFT1G Applications
There are a lot of ON Semiconductor
NVMFS4C01NWFT1G applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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