NVMFS4C01NT3G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Gate Charge (Qg) (Max) @ Vgs :

139nC @ 10V

Power Dissipation-Max :

3.84W Ta 161W Tc

Current - Continuous Drain (Id) @ 25°C :

49A Ta 319A Tc

Packaging :

Tape and Reel (TR)

Pulsed Drain Current-Max (IDM) :

900A

Lifecycle Status :

ACTIVE, NOT REC (Last Updated: 1 day ago)

Pbfree Code :

yes

Case Connection :

DRAIN

Operating Temperature :

-55°C~175°C TJ

RoHS Status :

ROHS3 Compliant

JESD-609 Code :

e3

Reference Standard :

AEC-Q101

Terminal Finish :

Tin (Sn)

Input Capacitance (Ciss) (Max) @ Vds :

10144pF @ 15V

Number of Elements :

1

FET Type :

N-Channel

Mounting Type :

Surface Mount

Number of Pins :

8

Configuration :

SINGLE WITH BUILT-IN DIODE

Drain-source On Resistance-Max :

0.00095Ohm

DS Breakdown Voltage-Min :

30V

Drain to Source Voltage (Vdss) :

30V

Vgs (Max) :

±20V

JESD-30 Code :

R-PDSO-F5

Terminal Position :

Dual

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Continuous Drain Current (ID) :

319A

Package / Case :

8-PowerTDFN

Operating Mode :

ENHANCEMENT MODE

Number of Terminations :

5

Vgs(th) (Max) @ Id :

2.2V @ 250µA

Mount :

Surface Mount

Reach Compliance Code :

not_compliant

Transistor Element Material :

SILICON

Factory Lead Time :

38 Weeks

Published :

2014

Terminal Form :

Flat

Rds On (Max) @ Id, Vgs :

0.9m Ω @ 30A, 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Lead Free :

Lead Free