NVMFS4C01NT1G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Elements :

1

Turn On Delay Time :

29 ns

Current - Continuous Drain (Id) @ 25°C :

49A Ta 319A Tc

DS Breakdown Voltage-Min :

30V

Vgs (Max) :

±20V

Case Connection :

DRAIN

Terminal Finish :

Tin (Sn)

Number of Pins :

8

Package / Case :

8-PowerTDFN

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Pulsed Drain Current-Max (IDM) :

900A

Reach Compliance Code :

not_compliant

Packaging :

Tape and Reel (TR)

Gate to Source Voltage (Vgs) :

20V

Transistor Element Material :

SILICON

Lead Free :

Lead Free

Number of Channels :

1

RoHS Status :

ROHS3 Compliant

Power Dissipation-Max :

3.84W Ta 161W Tc

JESD-30 Code :

R-PDSO-F5

Rds On (Max) @ Id, Vgs :

0.9m Ω @ 30A, 10V

Drain-source On Resistance-Max :

0.00095Ohm

Fall Time (Typ) :

36 ns

Pbfree Code :

yes

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Factory Lead Time :

11 Weeks

Mount :

Surface Mount

Mounting Type :

Surface Mount

Vgs(th) (Max) @ Id :

2.2V @ 250µA

Continuous Drain Current (ID) :

319A

Published :

2014

Configuration :

SINGLE WITH BUILT-IN DIODE

Gate Charge (Qg) (Max) @ Vgs :

139nC @ 10V

Rise Time :

68ns

Input Capacitance (Ciss) (Max) @ Vds :

10144pF @ 15V

Operating Temperature :

-55°C~175°C TJ

Drain to Source Voltage (Vdss) :

30V

Number of Terminations :

5

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

FET Type :

N-Channel

Terminal Position :

Dual

Terminal Form :

Flat

Turn-Off Delay Time :

53 ns

JESD-609 Code :

e3

Operating Mode :

ENHANCEMENT MODE