NVMFS4841NWFT1G
- Mfr.Part #
- NVMFS4841NWFT1G
- Manufacturer
- onsemi
- Package / Case
- 8-PowerTDFN
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 16A 5DFN
- Stock
- 17,671
- In Stock :
- 17,671
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Package / Case :
- 8-PowerTDFN
- Pin Count :
- 5
- Turn-Off Delay Time :
- 15.5 ns
- Pbfree Code :
- yes
- Vgs(th) (Max) @ Id :
- 2.5V @ 250μA
- Factory Lead Time :
- 38 Weeks
- Gate to Source Voltage (Vgs) :
- 20V
- Continuous Drain Current (ID) :
- 89A
- Radiation Hardening :
- No
- Drain to Source Breakdown Voltage :
- 30V
- JESD-609 Code :
- e3
- Published :
- 2013
- Number of Pins :
- 5
- Operating Temperature :
- -55°C~175°C TJ
- Surface Mount :
- yes
- ECCN Code :
- EAR99
- Turn On Delay Time :
- 13.5 ns
- Number of Channels :
- 1
- Element Configuration :
- Single
- Fall Time (Typ) :
- 7.5 ns
- Vgs (Max) :
- ±20V
- RoHS Status :
- ROHS3 Compliant
- FET Type :
- N-Channel
- Packaging :
- Tape and Reel (TR)
- Power Dissipation-Max :
- 3.7W Ta 112W Tc
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Input Capacitance (Ciss) (Max) @ Vds :
- 1436pF @ 12V
- Lead Free :
- Lead Free
- Current - Continuous Drain (Id) @ 25°C :
- 16A Ta
- Terminal Finish :
- Tin (Sn)
- Mounting Type :
- Surface Mount
- Halogen Free :
- Halogen Free
- Gate Charge (Qg) (Max) @ Vgs :
- 17nC @ 4.5V
- Rds On (Max) @ Id, Vgs :
- 7m Ω @ 30A, 10V
- Rise Time :
- 66.5ns
- Lifecycle Status :
- LIFETIME (Last Updated: 4 days ago)
- Datasheets
- NVMFS4841NWFT1G

N-Channel Tape & Reel (TR) 7m Ω @ 30A, 10V ±20V 1436pF @ 12V 17nC @ 4.5V 8-PowerTDFN
NVMFS4841NWFT1G Overview
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 1436pF @ 12V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 89A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 30V, and this device has a drainage-to-source breakdown voltage of 30VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 15.5 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 13.5 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.Using drive voltage (4.5V 10V), this device contributes to a reduction in overall power consumption.
NVMFS4841NWFT1G Features
a continuous drain current (ID) of 89A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 15.5 ns
NVMFS4841NWFT1G Applications
There are a lot of ON Semiconductor
NVMFS4841NWFT1G applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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