NVMFS4841NT1G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Input Capacitance (Ciss) (Max) @ Vds :

1436pF @ 12V

Case Connection :

DRAIN

JESD-609 Code :

e3

Pbfree Code :

yes

Continuous Drain Current (ID) :

16A

Radiation Hardening :

No

Fall Time (Typ) :

7.5 ns

Factory Lead Time :

2 Weeks

Turn-Off Delay Time :

15.5 ns

Drain Current-Max (Abs) (ID) :

89A

Terminal Position :

Dual

Mount :

Surface Mount

Transistor Element Material :

SILICON

Rds On (Max) @ Id, Vgs :

7m Ω @ 30A, 10V

Number of Elements :

1

Current - Continuous Drain (Id) @ 25°C :

16A Ta

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Type :

N-Channel

RoHS Status :

ROHS3 Compliant

Pin Count :

5

Number of Terminations :

5

Rise Time :

66.5ns

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Lifecycle Status :

LIFETIME (Last Updated: 4 days ago)

Operating Temperature :

-55°C~175°C TJ

Mounting Type :

Surface Mount

Published :

2013

Number of Pins :

5

Package / Case :

8-PowerTDFN, 5 Leads

Drain to Source Breakdown Voltage :

30V

Gate to Source Voltage (Vgs) :

20V

Element Configuration :

Single

Operating Mode :

ENHANCEMENT MODE

Power Dissipation :

112W

Pulsed Drain Current-Max (IDM) :

336A

Packaging :

Tape and Reel (TR)

Lead Free :

Lead Free

ECCN Code :

EAR99

Power Dissipation-Max :

3.7W Ta 112W Tc

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Turn On Delay Time :

13.5 ns

Halogen Free :

Halogen Free

Terminal Finish :

Tin (Sn)

Gate Charge (Qg) (Max) @ Vgs :

17nC @ 4.5V

Vgs (Max) :

±20V

Terminal Form :

Flat