NVMD4N03R2G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Pbfree Code :

yes

Surface Mount :

yes

Drain Current-Max (Abs) (ID) :

4A

Input Capacitance (Ciss) (Max) @ Vds :

400pF @ 20V

Operating Temperature :

-55°C~150°C TJ

Rds On (Max) @ Id, Vgs :

60m Ω @ 4A, 10V

Element Configuration :

Dual

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Gate to Source Voltage (Vgs) :

20V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Lead Free :

Lead Free

Vgs(th) (Max) @ Id :

3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs :

16nC @ 10V

Fall Time (Typ) :

10 ns

Published :

2012

Pin Count :

8

FET Technology :

METAL-OXIDE SEMICONDUCTOR

FET Feature :

Logic Level Gate

JESD-609 Code :

e3

Mounting Type :

Surface Mount

Turn On Delay Time :

7 ns

Continuous Drain Current (ID) :

4A

ECCN Code :

EAR99

Drain to Source Voltage (Vdss) :

30V

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Rise Time :

14ns

Max Power Dissipation :

2W

FET Type :

2 N-Channel (Dual)

Factory Lead Time :

26 Weeks

RoHS Status :

ROHS3 Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Finish :

Tin (Sn)

Number of Pins :

8

Packaging :

Tape and Reel (TR)

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Turn-Off Delay Time :

16 ns