NVJS4405NT1G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

RoHS Status :

ROHS3 Compliant

Operating Mode :

ENHANCEMENT MODE

Terminal Finish :

Tin (Sn)

Turn On Delay Time :

6 ns

Surface Mount :

yes

Input Capacitance (Ciss) (Max) @ Vds :

60pF @ 10V

JESD-609 Code :

e3

Rise Time :

4.7ns

Pbfree Code :

yes

Gate Charge (Qg) (Max) @ Vgs :

1.5nC @ 4.5V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Type :

N-Channel

Current - Continuous Drain (Id) @ 25°C :

1A Ta

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Lead Free :

Lead Free

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Packaging :

Tape and Reel (TR)

Gate to Source Voltage (Vgs) :

8V

Lifecycle Status :

ACTIVE (Last Updated: 12 hours ago)

Terminal Position :

Dual

Package / Case :

6-TSSOP, SC-88, SOT-363

Pin Count :

6

Fall Time (Typ) :

41 ns

Operating Temperature :

-55°C~150°C TJ

Transistor Application :

SWITCHING

Transistor Element Material :

SILICON

Power Dissipation-Max :

630mW Ta

Number of Pins :

6

Rds On (Max) @ Id, Vgs :

350m Ω @ 600mA, 4.5V

Drain-source On Resistance-Max :

0.35Ohm

Number of Elements :

1

ECCN Code :

EAR99

Element Configuration :

Single

Drain Current-Max (Abs) (ID) :

1A

Power Dissipation :

890mW

Drive Voltage (Max Rds On,Min Rds On) :

2.7V 4.5V

Vgs (Max) :

±8V

Vgs(th) (Max) @ Id :

1.5V @ 250µA

DS Breakdown Voltage-Min :

25V

Number of Terminations :

6

Terminal Form :

Gull wing

Turn-Off Delay Time :

25 ns

Mounting Type :

Surface Mount

Continuous Drain Current (ID) :

1A

Drain to Source Voltage (Vdss) :

25V

Published :

2011

Factory Lead Time :

4 Weeks