NVJS3151PT1G
- Mfr.Part #
- NVJS3151PT1G
- Manufacturer
- onsemi
- Package / Case
- 6-TSSOP, SC-88, SOT-363
- Datasheet
- Download
- Description
- MOSFET P-CH 12V 2.7A SC88
- Stock
- 9,489
- In Stock :
- 9,489
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Series :
- Automotive, AEC-Q101
- JESD-609 Code :
- e3
- Package / Case :
- 6-TSSOP, SC-88, SOT-363
- Rds On (Max) @ Id, Vgs :
- 60m Ω @ 3.3A, 4.5V
- JESD-30 Code :
- R-PDSO-G6
- Number of Elements :
- 1
- Vgs (Max) :
- ±12V
- Drain to Source Voltage (Vdss) :
- 12V
- Transistor Element Material :
- SILICON
- Drive Voltage (Max Rds On,Min Rds On) :
- 1.8V 4.5V
- Configuration :
- SINGLE WITH BUILT-IN DIODE AND RESISTOR
- DS Breakdown Voltage-Min :
- 12V
- Drain Current-Max (Abs) (ID) :
- 2.7A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Application :
- SWITCHING
- Packaging :
- Tape and Reel (TR)
- Current - Continuous Drain (Id) @ 25°C :
- 2.7A Ta
- Vgs(th) (Max) @ Id :
- 1.2V @ 50µA
- Operating Mode :
- ENHANCEMENT MODE
- Input Capacitance (Ciss) (Max) @ Vds :
- 850pF @ 12V
- Terminal Form :
- Gull wing
- Lifecycle Status :
- ACTIVE, NOT REC (Last Updated: 1 week ago)
- Terminal Position :
- Dual
- Power Dissipation-Max :
- 625mW Ta
- Terminal Finish :
- Tin (Sn)
- Operating Temperature :
- -55°C~150°C TJ
- RoHS Status :
- ROHS3 Compliant
- Surface Mount :
- yes
- Pbfree Code :
- yes
- Number of Terminations :
- 6
- Gate Charge (Qg) (Max) @ Vgs :
- 8.6nC @ 4.5V
- FET Type :
- P-Channel
- Drain-source On Resistance-Max :
- 0.06Ohm
- Mounting Type :
- Surface Mount
- Datasheets
- NVJS3151PT1G

P-Channel Tape & Reel (TR) 60m Ω @ 3.3A, 4.5V ±12V 850pF @ 12V 8.6nC @ 4.5V 12V 6-TSSOP, SC-88, SOT-363
NVJS3151PT1G Overview
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 850pF @ 12V.The drain current is the maximum continuous current the device can conduct, and the drain current of this device is 2.7A.Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 12V in order to maintain normal operation.Operating this transistor requires a 12V drain to source voltage (Vdss).By using drive voltage (1.8V 4.5V), this device helps reduce its overall power consumption.
NVJS3151PT1G Features
a 12V drain to source voltage (Vdss)
NVJS3151PT1G Applications
There are a lot of ON Semiconductor
NVJS3151PT1G applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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