NVJD4401NT1G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Radiation Hardening :

No

FET Type :

2 N-Channel (Dual)

Element Configuration :

Dual

Rds On (Max) @ Id, Vgs :

375m Ω @ 630mA, 4.5V

Gate Charge (Qg) (Max) @ Vgs :

3nC @ 4.5V

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Published :

2011

Drain to Source Breakdown Voltage :

20V

Terminal Finish :

Tin (Sn)

Drain Current-Max (Abs) (ID) :

0.91A

Gate to Source Voltage (Vgs) :

12V

Packaging :

Tape and Reel (TR)

FET Technology :

METAL-OXIDE SEMICONDUCTOR

JESD-609 Code :

e3

Power Dissipation :

550mW

RoHS Status :

ROHS3 Compliant

Factory Lead Time :

4 Weeks

Pin Count :

6

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Continuous Drain Current (ID) :

910mA

Number of Elements :

2

Surface Mount :

yes

FET Feature :

Logic Level Gate

Mounting Type :

Surface Mount

Input Capacitance (Ciss) (Max) @ Vds :

46pF @ 20V

Max Power Dissipation :

270mW

Vgs(th) (Max) @ Id :

1.5V @ 250µA

Rise Time :

227ns

Operating Temperature :

-55°C~150°C TJ

Package / Case :

6-TSSOP, SC-88, SOT-363

Turn On Delay Time :

83 ns

ECCN Code :

EAR99

Pbfree Code :

yes

Current - Continuous Drain (Id) @ 25°C :

630mA

Number of Pins :

6

Lead Free :

Lead Free

Fall Time (Typ) :

506 ns

Turn-Off Delay Time :

786 ns