NVGS3443T1G
- Mfr.Part #
- NVGS3443T1G
- Manufacturer
- onsemi
- Package / Case
- SOT-23-6
- Datasheet
- Download
- Description
- MOSFET P-CH 20V 3.1A 6TSOP
- Stock
- 24,801
- In Stock :
- 24,801
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Terminal Form :
- Gull wing
- Operating Temperature :
- -55°C~150°C TJ
- FET Type :
- P-Channel
- Number of Elements :
- 1
- Drain Current-Max (Abs) (ID) :
- 2.2A
- Additional Feature :
- ULTRA LOW RESISTANCE
- Terminal Finish :
- Tin (Sn)
- Continuous Drain Current (ID) :
- 3.1A
- Packaging :
- Tape and Reel (TR)
- Operating Mode :
- ENHANCEMENT MODE
- Turn On Delay Time :
- 10 ns
- Published :
- 2011
- Transistor Element Material :
- SILICON
- Gate Charge (Qg) (Max) @ Vgs :
- 15nC @ 4.5V
- Rds On (Max) @ Id, Vgs :
- 65m Ω @ 4.4A, 4.5V
- Number of Pins :
- 6
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- JESD-609 Code :
- e3
- Lifecycle Status :
- ACTIVE (Last Updated: 1 week ago)
- Pbfree Code :
- yes
- Reference Standard :
- AEC-Q101
- DS Breakdown Voltage-Min :
- 20V
- Current - Continuous Drain (Id) @ 25°C :
- 3.1A Ta
- Turn-Off Delay Time :
- 30 ns
- Number of Terminations :
- 6
- Vgs(th) (Max) @ Id :
- 1.5V @ 250µA
- Pin Count :
- 6
- Terminal Position :
- Dual
- Max Power Dissipation :
- 1W
- Drain to Source Voltage (Vdss) :
- 20V
- RoHS Status :
- ROHS3 Compliant
- Factory Lead Time :
- 13 Weeks
- Surface Mount :
- yes
- Fall Time (Typ) :
- 31 ns
- Element Configuration :
- Single
- Lead Free :
- Lead Free
- Input Capacitance (Ciss) (Max) @ Vds :
- 565pF @ 5V
- ECCN Code :
- EAR99
- Mounting Type :
- Surface Mount
- Gate to Source Voltage (Vgs) :
- 12V
- Package / Case :
- SOT-23-6
- Transistor Application :
- SWITCHING
- Rise Time :
- 18ns
- Datasheets
- NVGS3443T1G

P-Channel Tape & Reel (TR) 65m Ω @ 4.4A, 4.5V 565pF @ 5V 15nC @ 4.5V 20V SOT-23-6
NVGS3443T1G Description
The NVGS3443T1G power MOSFET from ON Semiconductor is ideal if you need to amplify or switch between signals in your design. It can dissipate up to 2000 mW of power. To allow for easy mounting and secure delivery, this device will be sent in tape and reel packing. This enhancement mode MOSFET transistor has a P channel. The operating temperature range for this MOSFET transistor is -55 °C to 150 °C.
NVGS3443T1G Features
-
Ultra-Low RDS(on)
-
Higher Efficiency Extending Battery Life
-
Miniature TSOP?6 Surface Mount Package
-
These Devices are Pb?Free and are RoHS Compliant
-
NVGS Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC?Q101 Qualified and PPAP Capable
NVGS3443T1G Applications
-
Cellular
-
Cordless Telephones
-
PCMCIA Cards
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