NVGS3443T1G
- Mfr.Part #
- NVGS3443T1G
- Manufacturer
- onsemi
- Package / Case
- SOT-23-6
- Datasheet
- Download
- Description
- SINGLE P-CHANNEL POWER MOSFET -2
- Stock
- 24,801
- In Stock :
- 24,801
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Max Power Dissipation :
- 1W
- Drain Current-Max (Abs) (ID) :
- 2.2A
- Element Configuration :
- Single
- Factory Lead Time :
- 13 Weeks
- Package / Case :
- SOT-23-6
- Terminal Position :
- Dual
- Fall Time (Typ) :
- 31 ns
- Continuous Drain Current (ID) :
- 3.1A
- Turn-Off Delay Time :
- 30 ns
- Transistor Element Material :
- SILICON
- Reference Standard :
- AEC-Q101
- Published :
- 2011
- Lifecycle Status :
- ACTIVE (Last Updated: 1 week ago)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Turn On Delay Time :
- 10 ns
- Gate to Source Voltage (Vgs) :
- 12V
- Mounting Type :
- Surface Mount
- Rds On (Max) @ Id, Vgs :
- 65m Ω @ 4.4A, 4.5V
- Input Capacitance (Ciss) (Max) @ Vds :
- 565pF @ 5V
- Rise Time :
- 18ns
- Terminal Form :
- Gull wing
- Lead Free :
- Lead Free
- Operating Temperature :
- -55°C~150°C TJ
- Number of Terminations :
- 6
- Number of Pins :
- 6
- Operating Mode :
- ENHANCEMENT MODE
- Vgs(th) (Max) @ Id :
- 1.5V @ 250µA
- FET Type :
- P-Channel
- Drain to Source Voltage (Vdss) :
- 20V
- Current - Continuous Drain (Id) @ 25°C :
- 3.1A Ta
- Pin Count :
- 6
- Pbfree Code :
- yes
- Packaging :
- Tape and Reel (TR)
- DS Breakdown Voltage-Min :
- 20V
- Number of Elements :
- 1
- JESD-609 Code :
- e3
- Gate Charge (Qg) (Max) @ Vgs :
- 15nC @ 4.5V
- Transistor Application :
- SWITCHING
- ECCN Code :
- EAR99
- Surface Mount :
- yes
- RoHS Status :
- ROHS3 Compliant
- Additional Feature :
- ULTRA LOW RESISTANCE
- Terminal Finish :
- Tin (Sn)
- Datasheets
- NVGS3443T1G

P-Channel Tape & Reel (TR) 65m Ω @ 4.4A, 4.5V 565pF @ 5V 15nC @ 4.5V 20V SOT-23-6
NVGS3443T1G Description
The NVGS3443T1G power MOSFET from ON Semiconductor is ideal if you need to amplify or switch between signals in your design. It can dissipate up to 2000 mW of power. To allow for easy mounting and secure delivery, this device will be sent in tape and reel packing. This enhancement mode MOSFET transistor has a P channel. The operating temperature range for this MOSFET transistor is -55 °C to 150 °C.
NVGS3443T1G Features
-
Ultra-Low RDS(on)
-
Higher Efficiency Extending Battery Life
-
Miniature TSOP?6 Surface Mount Package
-
These Devices are Pb?Free and are RoHS Compliant
-
NVGS Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC?Q101 Qualified and PPAP Capable
NVGS3443T1G Applications
-
Cellular
-
Cordless Telephones
-
PCMCIA Cards
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