NVF2955T1G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Resistance :

170mOhm

JESD-609 Code :

e3

Packaging :

Tape and Reel (TR)

Drive Voltage (Max Rds On,Min Rds On) :

10V

ECCN Code :

EAR99

Operating Temperature :

-55°C~175°C TJ

RoHS Status :

ROHS3 Compliant

Lead Free :

Lead Free

Radiation Hardening :

No

Power Dissipation-Max :

1W Ta

Rds On (Max) @ Id, Vgs :

170m Ω @ 750mA, 10V

Fall Time (Typ) :

38 ns

Rise Time :

7.6ns

Factory Lead Time :

12 Weeks

Turn-Off Delay Time :

65 ns

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

Gate Charge (Qg) (Max) @ Vgs :

14.3nC @ 10V

Drain to Source Voltage (Vdss) :

60V

Transistor Application :

SWITCHING

Drain to Source Breakdown Voltage :

-60V

Element Configuration :

Single

Transistor Element Material :

SILICON

Current - Continuous Drain (Id) @ 25°C :

2.6A Ta

Series :

Automotive, AEC-Q101

Power Dissipation :

2.3W

Published :

2008

Input Capacitance (Ciss) (Max) @ Vds :

492pF @ 25V

Vgs(th) (Max) @ Id :

4V @ 1mA

Pbfree Code :

yes

Gate to Source Voltage (Vgs) :

20V

Number of Channels :

1

Surface Mount :

yes

Turn On Delay Time :

11 ns

Length :

6.7mm

FET Type :

P-Channel

Pin Count :

4

Width :

3.7mm

Case Connection :

DRAIN

Number of Terminations :

4

Mounting Type :

Surface Mount

Number of Pins :

4

Height :

1.65mm

Operating Mode :

ENHANCEMENT MODE

Package / Case :

TO-261-4, TO-261AA

Vgs (Max) :

±20V

Terminal Finish :

Tin (Sn)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Weight :

250.212891mg

Terminal Position :

Dual

Terminal Form :

Gull wing

Continuous Drain Current (ID) :

2.6A

Number of Elements :

1

Avalanche Energy Rating (Eas) :

225 mJ