NVF2955PT1G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Position :

Dual

Input Capacitance (Ciss) (Max) @ Vds :

492pF @ 25V

FET Type :

P-Channel

Turn-Off Delay Time :

65 ns

Case Connection :

DRAIN

Transistor Application :

SWITCHING

Transistor Element Material :

SILICON

Published :

2008

Turn On Delay Time :

11 ns

Continuous Drain Current (ID) :

2.6A

Rise Time :

7.6ns

Drive Voltage (Max Rds On,Min Rds On) :

10V

Fall Time (Typ) :

38 ns

Rds On (Max) @ Id, Vgs :

185m Ω @ 2.4A, 10V

Series :

Automotive, AEC-Q101

Drain to Source Voltage (Vdss) :

60V

Power Dissipation :

2.3W

Number of Pins :

4

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Time@Peak Reflow Temperature-Max (s) :

30

Peak Reflow Temperature (Cel) :

260

Vgs (Max) :

±20V

Gate Charge (Qg) (Max) @ Vgs :

14.3nC @ 10V

Current - Continuous Drain (Id) @ 25°C :

1.7A Ta

Terminal Finish :

Tin (Sn)

Radiation Hardening :

No

Drain to Source Breakdown Voltage :

-60V

Vgs(th) (Max) @ Id :

4V @ 1mA

Number of Terminations :

4

Terminal Form :

Gull wing

ECCN Code :

EAR99

Packaging :

Tape and Reel (TR)

Gate to Source Voltage (Vgs) :

20V

Surface Mount :

yes

Mounting Type :

Surface Mount

Operating Temperature :

-55°C~175°C TJ

JESD-609 Code :

e3

Power Dissipation-Max :

1W Ta

Avalanche Energy Rating (Eas) :

225 mJ

Element Configuration :

Single

Package / Case :

TO-261-4, TO-261AA

Operating Mode :

ENHANCEMENT MODE

RoHS Status :

RoHS Compliant

Number of Elements :

1